FL 110 Search Results

K1R-103

Abstract: SensoPart msc 140 -10003 FL 102 K2R-25 D-79695 msc 140 FL 20 K2L-34 K2L-202
Contextual Info: FL 20 / FL 64 Fiber optics and fiber optic amplifiers FL 20 Miniaturline Teach In Contamination indication Red light N.O./N.C. selectable 1/2,2 mm External Teach IP67 1 kHz Versions: FL 20 R-NSK4 FL 20 R-NSM4 FL 20 R-PSK4 FL 20 R-PSM4 1 kHz, NPN N.O. cable

420A2249

Abstract: 416a4136 318A4146 820A4470 416A2226 318A2226 420AR
Contextual Info: i'Lh -‘^ LüG'lNS, 120VAC, 6QHz, *, nrequ^atec 4 X - Regulated file no. LR38236 file no. E82180 J L < § DC OUT-• UUCSA MODEL No. RATED OUTPUT VOLTS DC ma DC OUTPUTVDC1 FEATURES PRICE 100% FL 100% FL 10% FL 108VAC 132VAC 132VAC • EM I: M eets F C C Part 15.

Contextual Info: POWER SPLITTERS/COMBINERS 50Ω 9 WAY-0° 2 to 1000 MHz ZC9PD PSC-9 ISOLATION dB FREQ. RANGE MHz MODEL NO. PSC-9-1 fL-fU 2-300 ZC9PD-1000 800-1000 L MJ INSERTION LOSS, dB Above 9.6dB U 25 26 20 30 20 22 L = low range [fL to 10 fL] MJ L Typ. Min. Typ. Min. Typ. Min.

jrc 084 pin configuration

Abstract: NJU3401
Contextual Info: NJU3401 Preliminary 4-B IT SING LE C H IP M ICRO CO NTRO LLER W IT H FL DRIVER • GENERAL DESCRIPTION The NJU3401 is a 4-bit Single Chip Micro controller consisted of 4-bit CPU Core, ROM, RAM, I/O PORT, A/D CONVERTER, OSCILLATOR , FL DRIVER, and SERIAL OUTPUT.

gw 4007

Abstract: WLAN Modul WEP128 WEP64 WPA-Psk-tkip
Contextual Info: AT-Command Line Interface WLAN Liste der AT-Kommandos der FL WLAN EPAs AUTOMATION Datenblatt 7964_de_00 1 PHOENIX CONTACT - 04/09 Beschreibung Der FL WLAN Ethernet Port Adapter WLAN EPA ist ein industrietaugliches serielles WLAN-Gerät. Der WLAN EPA verfügt über einen Ethernet-Port und eine WLANFunkschnittstelle (802.11 b/g).

V1527

Abstract: RY475 ctek
Contextual Info: rEHEPATOPHbm TETPOfl r y - 4 7 B T e H e p a T o p H b iii T e T p o fl ry -4 7 5 n p e f lH a 3 H a H e H P f\n ycu jieH M fl mou^hoctm H a M acTO Tax f lo 7 0 M r q. OEUJME CBEflEHMfl K a T O fl - BOJlbC^paMOBblii TOpupOBaHHblM KapÓMflUpoBaH H biü n p ^ M o ro H a K a n a .

Contextual Info: Mini-Circuits - Specification for Amplifier - ZFL-1000GH Amplifier print this page ZFL-1000GH Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range VSWR Output 1 dB Comp. Input (no damage) 10-1200 24 ±1.50 +1.30 +10.00 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)

020702

Abstract: 110 ohm resistor DS2107S DDG5557 transistors dal
Contextual Info: DS2107S DALLAS SEMICONDUCTOR CORP 2bl4130 0DDSSS7 fl SDE D DALLAS SEMICONDUCTOR DS2107S SCSI Terminator FEATURES PIN ASSIGNMENT • Fully compliant with SCSI and SCSI-2 standards 3 16 J J 15 3 D 14 n n • Laser-trimmed 110 ohm termination resistors have 1% tolerance

622D

Abstract: CM601 CM603 CM600 CM602 CM611 CM621 CM604
Contextual Info: COMPUTER PRDTS n POUER DE | 2313103 0DD037b fl | D SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load and 2 5 °C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Output V o lta g e . . 9 VDC

V-650

Contextual Info: rEHEPATOPHbIM IlEHTOfl ry-46 PENTODE TeHepaTopHbiM neHTOfl ry-46 npeflHa3 HaneH fl/ia paôO Tbi b r e H e p a T o p a x c 3 H e a B n c n M b iM B o a ô y ^ f le - HneM mjimcaM0B036y>KfleHneM Ha nacTOTaxflo 60 Ml"14, 3 4 a T K>Ke f l j i î i n n H e iiH o r o yci/m e H M fl m ol h o c tm b p a f ln o -

ScansU9X26

Contextual Info: rEHEPATOPHbIM IlEHTOfl ry-46 PENTODE TeHepaTopHbiM neHTOfl ry-46 npeflHa3 HaneH fl/ia paôO Tbi b r e H e p a T o p a x c 3 H e a B n c n M b iM B o a ô y ^ f le - HneM mjimcaM0B036y>KfleHneM Ha nacTOTaxflo 60 Ml"14, 3 4 a T K>Ke f l j i î i n n H e iiH o r o yci/m e H M fl m ol h o c tm b p a f ln o -

3ez18

Abstract: 293ez
Contextual Info: 3EZ 1 … 3EZ 200 3 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 3W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

Z1SMA10

Abstract: Z1SMA100 Z1SMA11 Z1SMA12 Z1SMA13 Z1SMA15 Z1SMA16 zspa
Contextual Info: Z1SMA1 . Z1SMA100 1 W Z1SMA1 . Z1SMA100 (1 W) Surface mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2011-02-28 Maximum power dissipation Maximale Verlustleistung 2.2± 0.2

5349B

Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Contextual Info: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

Contextual Info: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14E ° | fl J | 0007575 PNP EPITAXIAL SILICON TRANSÌSTOR T LOW NOISE TRANSISTOR - 3 9 - ñ SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Z2SMB10

Abstract: Z2SMB11 Z2SMB12 Z2SMB13 Z2SMB15 Z2SMB16 Z2SMB200 Z2SMB33
Contextual Info: Z2SMB1 . Z2SMB200 2 W Z2SMB1 . Z2SMB200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2010-12-06 Maximum power dissipation Maximale Verlustleistung ± 0.5 2.2± 0.2

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF450 CASE OUTLINE: TO-3 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Silicon Zener Diodes melf

Abstract: DO-213AB
Contextual Info: SMZ 1 … SMZ 200 2 W Surface mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage 2.5 Maximum power dissipation Maximale Verlustleistung 2W 0.5 Plastic case MELF Kunststoffgehäuse MELF 0.5

DS1BB20

Contextual Info: fl 1W DALLAS SEMICONDUCTOR FEATURES • Unique 1-Wire interface requires only one port pin for communication ■ Multidrop capability simplifies distributed temperature sensing applications ■ Requires no external components ■ Can be powered from data line. Power supply

BUZ382

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ382 CASE OUTLINE: TO-247 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTH15N35 CASE OUTLINE: TO-218 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT130A-TO71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

MJW16110

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJW16110 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING: