FJV3102RMTF Search Results

LEXAN 121r - 21051

Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
Contextual Info: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F

sot23 w32

Abstract: SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g
Contextual Info: Main System Design location Level Parts Code Parts Description Spec.

Contextual Info: FJV3102R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Contextual Info: FJV3102R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJV4102R Application • Switching Application (Integrated Bias Resistor)

w76l

Abstract: 9m50
Contextual Info: Mai nSyst em Opt i on SECCode Loc at i on Name Descr i pt i on Uni t I C0902002197 T7300 2. 0GHz CPU MI CROPROCESSOR; LF80537GG0414M, 2. 0GHz, uFCPGA, 479P, TR, PLASTI C, 1. 05V, 34W, 0t o+10 PC 0C, 4MB, Mer om T7300, FSB800, 4M I CDRAM MODULE; M470T6554,

Contextual Info: - Thi s Documentcan notbe used wi thoutSamsung' s authori zati on - 10. PartList 1 Main Board Main Board Location SEC Code Name Specification Quantity B504 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,- 1 B510 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,-

PORON-HH48

Abstract: BA42-00163A BA42-00133A l565 SMD RA15 4P SOT323 HD3 94V-0 KUBNKM088A AUO b513 E802
Contextual Info: 10. Electrical Partlist Option SEC Code Main System Name Location BA44-00205A 60W_ADATOR LISHIN ADAPTOR BA46-04730A BIOS HDM-WXPP+F/W-EN G BIOS Spec. LF80539GF0282M,1.66GHz,64Bit,uFCPGA,478P,T R,Plastic,1.05V,31W, 0to+70C,2MB,32Bit M470T3354BG0,32Mx64Bit,SODIMM,200P,67.6x3

Contextual Info: FJV3102R FJV3102R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: FJV3102R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJV4102R Application • Switching Application (Integrated Bias Resistor)

smd w70 diode

Abstract: delta inverter hed55xxu12 A302 w9 BA41-00727A NB8M LTN121W1-L03-G BA41-00728A NH82801HBM UJ-850
Contextual Info: Main System Location Level SEC Code Name Description Qt'y SA/SNA T7100 1.8GHz .1 0902-002196 IC-MICROPROCESSOR 1 SA T7300(2.0GHz) .1 0902-002197 IC-MICROPROCESSOR