FIELD RESISTOR GE Search Results

resistor 1005

Abstract: ERJ2GE
Contextual Info: Thick-Film Chip Resistor 1005 Anti-Sulfurated Thick Film Chip Resistor Expansion of variety of product Current size: 1608(0603 ,2012(0805) size) Industry/Field: Home appliance, Industrial equipment The chip resistor with a special construction to avoid open failure due to the presence of sulfur.

Contextual Info: August 2010 Low Resistance Value Metal Plate Surface Mount Chip Resistor 0603 Low Resistance Value Metal Plate Surface Mount Chip Resistor Mobile communications Industry/Field: Wide range of products Suitable for current detection of power circuit of cellular phone

"power supply circuits"

Abstract: RESISTOR 5025
Contextual Info: Thick-film chip resistor 3225 1210 size compact chip resistor with high-power and anti-surge characteristics Expansion of variety of product (Current size: 2012(0805), 3216(1206) size) electronics, Power supply circuits Industry/Field: Automotive Home appliance, Industrial equipment

RKM 16

Abstract: RKM 9
Contextual Info: noHm Resistor Networks RM • RY A number of resistors are packed in a small package, for high density mounting. The excellent characteristics of thick film resistor are fully made by our designers who have long experience in this field. The result is a series of high performance, high reliable resistor network products.

Contextual Info: Preliminary SIGC185T350R2CH IGBT Chip in Field stop-technology C FEATURES: • 3500V Field stop technology • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC185T350R2CH 3500V This chip is used for: • power modul

178476

Abstract: 178476000 metal sensor EC000516
Contextual Info: Product catalogue | Sensor-Actuator-Interface SAI | SAI - active / field buses | Accessories | Terminating resistor General ordering data Order No. Part designation Version EAN Qty. 1784770000 SAIEND PB M12 5P B-COD Sensor/Actuator plug-in connector, straight,

RML ROHM

Abstract: RKM 16 rkm6 rkm8l rkm8 RKM 9
Contextual Info: noHifi Resistor Networks RM • RY A number of resistors are packed in a small package, for high density mounting. The excellent characteristics of thick film resistors are designed by ROHM through long experience in this field. The result is a series of high performance, high reliable resistor network products.

ic 7404 datasheet

Abstract: TPS40140 SLYT273 DV34 IC TRACE CODE ON BOX LABEL INFORMATION slyt274
Contextual Info: General Interest Texas Instruments Incorporated Spreadsheet modeling tool helps analyze power- and ground-plane voltage drops to keep core voltages within tolerance By Steve Widener Analog Field Applications Engineer Introduction Figure 1. Resistor sheet The trend toward smaller geometries in processor cores

TRANSISTOR SMD MARKING CODE QR

Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: P-CHANNEL MOSFET
Contextual Info: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

Contextual Info: TOSHIBA SSM3K04FS TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive : V^h = 0.7—1.3 V Low Gate Threshold Voltage Small Package

Contextual Info: SP -1204 Bond Pad □ Buried Zener Nichrome Clear Field Area N+ /P+ Diode | j P-JFET Q DBNPN I DBPNP ( | ) MNPN [j Pinch Resistor @ MPNP 4.5pF Capacitor A Tile 6pF Capacitor 7pF Capacitor 2 BTile [] SPNP “ SNPN SP1204 COMPONENT COUNT SUMMARY DESCRIPTION

marking MOW

Contextual Info: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package

Contextual Info: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : R@g = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V ^ = 0.7~1.3V Small Package

Contextual Info: SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

SSM6N04FU

Contextual Info: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. · 2.5 V gate drive · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package

so2 sensor datasheet

Abstract: Contactless Sensor chip mr sensor ezmpl ezmpl gas sensor no2 Thermal Cutoffs magneto
Contextual Info: Chip Magneto Resistors Chip Magneto Resistors Type: EZMPL Type M Chip Magneto Resistor changes its resistance Value in accordance with the change of intensity of the surrounding magnetic field. This type, EZMPL is suitable as a reliable contactless sensor for detecting the number of rotations, rotation

SSM3K04FU

Contextual Info: SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

SSM3K04FS

Contextual Info: SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

Contextual Info: TOSHIBA SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS U n it in mm 2.1 ± 0.1 With Built-in Gate-Source Resistor : Rq § = 1 MO Typ. 1.25 ±0.1 2.5 V Gate Drive Low Gate Threshold Voltage E t

Contextual Info: T O SH IB A SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package

12 volt zener diode on pspice

Abstract: SP1204 1100 RESISTOR ARRAY 7.5 volt zener diode on pspice Nippon capacitors
Contextual Info: SP -1204 Bond Pad □ Buried Zener \•* l« Nichrome Clear Field Area N+ /P+ Diode | j P-JFET DBNPN I DBPNP ( | ) MNPN [j Pinch Resistor @ MPNP © 4.5pF Capacitor A Tile 6pF Capacitor © 7pF Capacitor 2 BTile []SPNP “ SNPN ARCHITECTURE & ORGANIZATION

Contextual Info: SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

SSM3K04FS

Contextual Info: SSM3K04FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FS High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package