FFCAT Search Results

Contextual Info: 10 -1 0 0 MHz Standard Hybrid Amplifier • Spec/ffcat/on //mit Parameters 10-100 MHz bandwidth Temperature + 25 High reverse isolation 0.5 0.6 dB Max p-p 27 27 dB Min 1.5:1 1.5:1 Max 1.5:1 1.5:1 Max + 24 +23 dBm Min 3rd O rde r + 38 + 37 dBm Min 2nd O rde r

D0-203AB

Abstract: d-u203 70HRR
Contextual Info: Bulletin 120202 10/96 International IO R Rectifier 70HF R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 70 A High surge current capability ■ Designed lor a wide range of applications ■ Stud cathode and stud anode version ■ Leaded version available

xl 1507

Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
Contextual Info: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment

A327A

Contextual Info: \ 4 * ' O B A W IW e f T r 'w H t i 1B H A D E j W W IN T H IR D ANGLE PR O JEC TIO N t è 'ù w W Ili3 h e p . i* -W < w u r fp V w t h I I p u b l ic a t io n .19 7 REVISIONS aespuprroN zone Lift ovæ • f» REDRAW .jp . V',; . I , * ; .> ■ »' I i I 0

Contextual Info: Bulletin 127501 08/97 International 3BR Rectifier m t .KB SERIES Power Modules THREE PHASE BRIDGE Features • Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case

Equivalent ana 650

Abstract: qtc 2730
Contextual Info: r, I i, ; . MIL.c-39012/z5E +%$%+= RI L-C-39012/250 6 October 1983 MILITARY YECIFICAT]ON sME1 CONUICTOAS, CWIAA , RAOIOFR20UfNCY HAROUANIFOR RAOILTREQLENCYCOASIM CW4ECTORS This specification fs approved for use by all DepartIWItS and Agensies of the LSsp4rt5ent of DefetTSe.

62320 rectifier

Abstract: E 62320
Contextual Info: Bulletin 12771 rev. D 08/97 Inte rn ation al lö R Rectifier MT SERIES THREE PHASE BRIDGE Power Modules Features 25 A 35 A • Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package, electrically insulated case ■ Center holetixing

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: CDPMî DPS1026 64KX16 CMOS SRAM MODULE D ense-Pac Microsystems, In c N O T R E C O M M E N D E D F O R N E W D E S IG N S DESCRIPTIO N : The DPS1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors

mpd416c

Abstract: UPD416 PD416D oq 0051 nec D416 PD416-5 MPD416D
Contextual Info: jjpù4i y piPD416-1 /¿PD416-2 fiPD416-3 ^PD416-5 NEC Electronics U.S.A. Inc. Microcomputer Division 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY DESCRIPTION T h e N E C /uPD41 6 is a 16384 w ords by 1 b it D y n a m ic M O S R A M . It is designed fo r