FF SOT23 Search Results

PW 2N

Abstract: marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY P a rt N u m b e r V û S o ff ( V ) r D S (o n) M a x ( Q ) ItH o ff) T Y P ( P A ) 2N/PN/SST4391 - 4 to -1 0 30 5 4

2n5432

Abstract: TO206AC 2N5433
Contextual Info: 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number v G S o ff (V) r D S (o n ) M a x ( Q ) k x o ff) iy p (pa) ton Typ (ns) 2N5432 - 4 t o -1 0 5 10 2.5 2N5433 - 3 to - 9 7 10 2.5 2N5434 -1 t o - 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS

marking 2904

Abstract: MDC1000B MDC1000 318E-04
Contextual Info: SMALLBLOCK Products MOSFET Turn-Off Devices % 40 T his new series of M O S F E T tu rn -o ff devices offers an econom ical w ay to reduce the turn-o ff tim e of pow er M O SFETs. Additionally, they cla m p the M O S F E T gate voltage to a safe level. T h e use of a M O S F E T turn-off de vice low ers

Contextual Info: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR

transistor marking c y

Abstract: Transistor hFE CLASSIFICATION Marking CE
Contextual Info: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER SOT-23 HIGH fT ff»1100MHz TYP. ABSOLUTE MAXIMUM RATINGS (TA-25t:) Characteristic Sym bol Collector-Base Voltage Coltector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

marking 724 diode

Abstract: SB420 sot-23 MARKING CODE 21 SB420D
Contextual Info: SB420D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FF Absolute Maximum Ratings Ta= 25OC Parameter Symbol Value

diode LR 105

Contextual Info: BAS40/-04/-05/-06_ visB ff Vishay Telefunken Surface Mount Schottky Barrier Diodes Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection Applications Fast switches in thick and thin film circuits

marking 724 diode

Abstract: sot-23 MARKING CODE 21 SB420D marking code TS
Contextual Info: SB420D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FF Absolute Maximum Ratings Ta= 25OC Parameter Symbol Value

BCV47

Contextual Info: BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS • ■ ■ ■ Type Marking BCV27 FF BCV47 FG SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE DARLINGTON HIGH GAIN, HIGH INPUT IMPEDANCE

marking 603 npn transistor

Abstract: marking HA 7 sot23
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES BFS20 PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS

bfs20

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BFS20 FEATURES PINNING • Low current max. 25 mA PIN DESCRIPTION • Low voltage (max. 20 V) 1 base • Very low feedback capacitance (typ. 350 fF). 2 emitter 3 collector APPLICATIONS

marking 712 sot-23

Abstract: marking code WM sot23 712 SOT23 TVS SOT23 712 712 marking MARKING WM SOT-23 XS marking code X_S marking
Contextual Info: ff PROlEK DEVICES PSM71S Engineered solutions fo r the transient environment APPLICATIONS RS-485 Transceivers Network Interfaces Wireless Systems Hand Held/Portable Electronics h • • • • IEC 1000-4 COMPATIBLE SOT-23 PACKAGE FEATURES • • • •

Contextual Info: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage

BCV27

Contextual Info: N BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SOT23 E.8

Abstract: TK713xxM ATF SOT23-5
Contextual Info: Linear ICs TK713xxM NOT RECOMMENDED FOR NEW DESIGNS LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ ■ Low Quiescent Current ■ Portable Consum er Equipment ■ Very Stable Output ■ Cordless Telephones ■ Active Low O n/O ff Control

bcv47

Contextual Info: f Z 7 SGS-THOMSON Ä 7 # MoeœiuserœiD BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS Type M arking BCV27 FF BCV47 FG • SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS

Contextual Info: BCV27 BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BCV27

Contextual Info: BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

smd npn darlington bcv47

Abstract: smd npn darlington BCV27 BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON TRANSISTORS BCV27 BCV47 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking:BCV27= FF BCV47= FG ABSOLUTE MAXIMUM RATINGS

W18 sot23

Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
Contextual Info: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA

K348M

Abstract: DB3-G144
Contextual Info: TK11348M rv!v o ff. $0 3 - SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Applications Information

IC CD 4440 pin diagram

Abstract: marking KE SOT-89 sem 3040 equivalent transistor K 3565 U G N 3140 sensor
Contextual Info: ÎSSTOKO TK113xxB VOLTAGE REGULATOR W ITH O N /O FF SW ITCH FEATURES APPLICATIONS • High Voltage Precision at ± 2.0% ■ Battery Powered Systems ■ Active Low On/Off Control ■ Cellular Telephones ■ Very Low Dropout Voltage 80 mV at 30 mA ■ Pagers

Contextual Info: 3-Pin One-Cell Step Up/ Down DC-to-DC C onverter, /On & O ff Switch ADVANCED IN FO R M A TIO N APPLICATIONS FEATURES ON/OFF Switch Guaranteed Start-up From Below 0.9 Volt High Efficiency Low Quiescent Current 300mA Switch @ 5 Volt 200kHz Switching Rate

SOT323-6

Abstract: BF772W
Contextual Info: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB