FF 50 R 12 KF IGBT Search Results

IGBT FF 300

Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
Contextual Info: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF

eupec FZ 50 A 12 KF

Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
Contextual Info: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF

IGBT FF 300

Abstract: eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF
Contextual Info: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules

FF 150 R 1200 kf igbt

Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
Contextual Info: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20

FF 150 R 1200 kf igbt

Abstract: IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12
Contextual Info: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules

FZ 77 1000

Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Contextual Info: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5

IGBT FF 300 R 12 KF2

Abstract: FZ 77 1000 igbt ff 75 r IGBT FZ 1200 FF 100 R 12 kf2 igbt FZ200
Contextual Info: IGBT modules Type VcES le A V IcRM v C E sat. ton ts R th J C DC per arm = tvj max tv ,= tvi = tvi 1 rrs 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US |iS |JS °C/W °c tvi O utline Dual m odules 15 R 12 KF 1200 15 30 3 0,4 0,5 0,2 1 150 63 25 R 06 KF2

Contextual Info: EUPEC IGBT modules b lE D • 34032^17 G00134S 32fl H U P E C Normal modules Type Vc e S IcRM lc A ^on ts tf R«hjc DC per arm tvj max = 25 °C, typ. tvj = 25 °C, typ. tvj V us US us °C/W °c 30 3 0,4 0,5 0,3 1 150 1 ms t,| = 25 °C, typ. A tp = V v C E sa t.

FF100R10KN

Abstract: Eupec fz 1200 r 12 fz 300 r 12 kf2 eupec module igbt FZ200
Contextual Info: EUPEC IGBT m odules b lE 34032^7 0G01345 3Efl D IUPEC Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C, typ. tv¡ A V US US us °C/W °c 150 59 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50 100 3 0,45

igbt power module FS 25 R 12 KF2

Abstract: Eupec fz 1200 r 12 FD100 FZ200
Contextual Info: EUPEC IGBT modules b lE D • 34032^7 0G 01345 3Efl M U P E C Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C , typ. tv¡ A V US US us °C/W °c 150 59 = 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50

IGBT module FZ 1200

Abstract: IGBT FZ 200 IGBT module FZ 400 FZ 800 R12 KF1 IGBT FZ 800 IGBT FZ 1200 kf1 IGBT FZ 1200 IGBT FZ 600 IGBT FZ 1000 RT200
Contextual Info: IG BT-Mod ule IGBT modules Modules IGBT Typ Type V CES lc V A R ,h jc DC pro Zweig per arm par bras tv, max IS ° C /W °c 0: 0,088 0.089 ICRM v CEsat Ion ts tf i ms tv| = 25 °C, typ. lv| = 25 “C, typ. t»,= 2 5 °C, typ tv, 25 °C, typ A V us US Maßbild

IGBT FZ 1200

Abstract: IGBT FZ 600 IGBT FZ 1000
Contextual Info: IGBT modules Single pack modules ISOTOP Type VceS lc IcRM = A ton = ts t»| = t, R th J C tv i = DC per arm tvj max tv i- tv i 1 ms 25 “ C, typ. 25 °C, typ. 25 "C, typ. 2 5 °C, typ. A V us us |iS °c/w °C *p V v C E sa t. Outline FZ 15 A 10 KN 1000 15

FZ 77 1000

Abstract: FZ 77 FZ 79 IGBT FZ 1200 IGBT FZ 1000 IGBT FZ 600 Discrete IGBTS IGBT module FZ 1200 kl 4 F15A12gf
Contextual Info: EUPEC IGBT modules blE T> m 34032^7 D00134fa •UPEC Single pack m odules ISOTOP Type VcES V lc A IcHM v CEsat ton ts = t, RthJC DC per arm = tp = 1 ms t v i- tvi tv ,= tv, 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US us us tvj max °C/W °c

thyristor tt 162 n 12

Abstract: thyristor tt 162 n thyristor TT 46 N thyristor TT 162 asymmetric thyristor thyristor tt 25 thyristor TD 25 N dd 55 n 14 powerblock powerblock tt 162 thyristor tt 105 n 16
Contextual Info: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr IGBT Seite 128 Presspacks Stacks Outlines Accessories Explanations 128 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 average on state current A standard ceramic disc high power ceramic disc

Contextual Info: FUJI 2-Pack IGBT 600 V 50 A 2MBI 50F-060 MUMËïïraiÊ IGBT MODULE ( F series Outline Drawings • Features • Low Saturation Voltage • Voltage Drive • Variety of Power Capacity Series ■ Applications • Inverter for M o tor Drive • AC and DC Servo Drive A m plifier

EUPEC tt 162 n 16

Abstract: thyristor tt 162 n high power thyristor module bsm 25 gp 120 igbt module bsm 100 gb 60 dl DISC THYRISTOR diode high power thyristor scr EUPEC tt 105 N 16 IGBT module FZ
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 101 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc epoxy disc 19 mm high

Contextual Info: 6MBI25L-120 25A IGBT ' Ë ± s < r7 - * i * = L - ) U (L SE R IE S) î ' Outline Drawings IG B T M O D U L E F e a tu re s High Sp eed Switching • f c & z . 'f Low Saturation Voltage • W E S E f t (M O S - ir — h f l l i i ) • Voltage Drive Variety of Pow er Capacity Series

IGBT FF 300 r12

Abstract: FF400R12KF4 FF400R12KF
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

G1 TRANSISTOR

Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

FF600R12KF4

Abstract: FF 150 R 1200 kf igbt IC600A
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

IGBT FF 300 r12

Abstract: FF400R12KF4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

M116

Abstract: 300L-120
Contextual Info: F U JI 1-Pack IGBT 1200 V 300 A 1MB/ 300L-120 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifie r

IGBT FF 300 r12

Abstract: FF400R12KF4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

FF600R12KF4

Abstract: igbt ff 75 r
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2