FET WITH SCHOTTKY DIODE Search Results

Contextual Info: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode Preliminary data Philips Semiconductors 2002 Sep 09 Philips Semiconductors Preliminary data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode FEATURES CBTS3253

CBTS3253PW

Abstract: JESD22-A114 JESD22-A115 JESD78 CBTS3253 CBTS3253D CBTS3253DB CBTS3253DS CS3253 2b3 diode
Contextual Info: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping Product data Philips Semiconductors 2002 Nov 06 Philips Semiconductors Product data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping FEATURES

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

QS6U24

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

SC-95

Abstract: PA507TE-T1-A
Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm The μ PA507TE is a switching device, which can be driven directly 0.32 +0.1 –0.05 0.65 –0.15 DESCRIPTION +0.1

Contextual Info: QS6U24 QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

DUAL FET

Abstract: schottky diode
Contextual Info: Contents SN74CBTD3306 SN74CBTS3306 CBT With Integrated Diodes 5–2 Page Dual FET Bus Switch With Level Shifting . . . . . . . . . . . 5–3 Dual FET Bus Switch With Schottky Diode Clamping . . . . . . . . . . . . . . . . . . . . 5–7 SN54CBTD3384 SN74CBTD3384

Contextual Info: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 Features 1) The QS6U22 combines Pch MOS FET with a Schottky

QS5U28

Contextual Info: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.

QS6U22

Abstract: EXPORT U22
Contextual Info: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky

Contextual Info: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.

Contextual Info: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (2) (1) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky

Contextual Info: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.

QS5U26

Contextual Info: QS5U26 Transistor 2.5V Drive Pch+SBD MOS FET QS5U26 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U26 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package.

Contextual Info: QS6U22 QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky

Contextual Info: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U27 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package.

SC-95

Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven

SC-95

Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven

hz nec

Abstract: SC-95 UPA507TE
Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven

fet with schottky diode

Abstract: SC-95
Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven

SC-95

Abstract: upa1980
Contextual Info: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA1980 P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µ PA1980 is a switching device, which can be driven

FL6L5203

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5203 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Overview  Package FL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small

FM6L5202

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FM6L5202 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FM6L5202 is N-channel type MOS FET with Schottky Brrier Diode in small