FET TO 220 Search Results

2SK3305

Abstract: 2SK3305-S 2SK3305-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263

Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

D1426

Abstract: 2SK3325 2SK3325-S 2SK3325-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3325 TO-220AB 2SK3325-S TO-262 2SK3325-ZJ TO-263

cd 1619 CP AUDIO

Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

NEC k 3654

Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

2SK3458

Abstract: 2SK3458-S 2SK3458-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3458 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3456 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3456 is N-channel DMOS FET device that features PART NUMBER PACKAGE 2SK3456 TO-220AB 2SK3456-S TO-262

2SK3305

Abstract: 2SK3305-S 2SK3305-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263 features a low gate charge and excellent switching

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

2SK3456

Abstract: 2SK3456-S 2SK3456-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3456 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3456 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3456 TO-220AB 2SK3456-S TO-262 2SK3456-ZJ TO-263 features a low gate charge and excellent switching

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

2SK3111

Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent

2SK3458-ZK

Abstract: 2SK3458 2SK3458-S MP-25 220AB
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3458 TO-220AB 2SK3458-S TO-262 2SK3458-ZK TO-263 low gate charge and excellent switching characteristics,

2SK3109-ZJ

Abstract: MP-25 2SK3109 2SK3109-S
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent

2SK3109

Abstract: 2SK3109-S 2SK3109-ZJ MP-25 D13332EJ2V0DS00
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent

2SK3111

Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent

Contextual Info: 4.0V to 5.5V, 0.8A 1ch Synchronous Buck Converter integrated FET BD8966FVM Key Specifications  Input voltage range:  Output voltage range:  Output current:  Switching frequency:  Pch FET ON resistance:  Nch FET ON resistance:  Standby current:

Contextual Info: Datasheet 2.5V to 5.5V, 0.3A 1ch Synchronous Buck Converter integrated FET BD9122GUL Key Specifications  Input voltage range:  Output voltage range:  Output current:  Switching frequency:  Pch FET ON resistance:  Nch FET ON resistance:  Standby current:

RDX050N50

Abstract: voltage 10v mos fet Z diode
Contextual Info: RDX050N50 Transistors 10V Drive Nch MOS FET RDX050N50 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

RDX045N60

Contextual Info: RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

RDN050N20

Contextual Info: RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

RDN120N25

Contextual Info: RDN120N25 Transistors 10V Drive Nch MOS FET RDN120N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.