FET TO 220 Search Results

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

Contextual Info: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2sk2903

Contextual Info: 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS Uninterruptible Power Supply DC-DC converters

HAF2001

Abstract: HD74LS08 DSA003641
Contextual Info: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353D Z 5th. Edition Mar. 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

41315

Abstract: 30424 45560
Contextual Info: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its

45560

Contextual Info: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its

CT3253A

Abstract: C3253 CBT3253AD CBT3253ADB JESD22-A114 JESD22-A115 JESD78 SSOP16
Contextual Info: CBT3253A Dual 1-of-4 FET multiplexer/demultiplexer Rev. 02 — 8 February 2007 Product data sheet 1. General description The CBT3253A is a dual 1-of-4 high-speed TTL-compatible FET multiplexer/demultiplexer. The low on-resistance of the switch allows inputs to be

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

2SK2907-01R

Contextual Info: 2SK2907-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-3PF 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 3.2 +0.3 ±0.3 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 High speed switching

BUK7208-40B

Contextual Info: BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

771-BUK7215-55A118

Contextual Info: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: OPA137 OPA2137 OPA4137 OPA 413 7 OPA 137 OPA 413 7 OPA 213 7 LOW COST FET-INPUT OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION ● ● ● ● ● ● ● ● OPA137 series FET-input operational amplifiers are designed for low cost and miniature applications. In addition to small

nec 2501

Abstract: 2SJ673
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ673 Isolated TO-220 MP-45F designed for high current switching applications.

HITACHI DIODE

Abstract: 2SK1761 2SK1762 2SK2426 DSA003773
Contextual Info: 2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

RJK5014DPP

Abstract: RJK5014DPP-00-T2
Contextual Info: RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

Contextual Info: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-653B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds(oii) = 0.042i2 typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO-220CFM

Contextual Info: FU JI 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0 ,1 3 Q 20A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof TO-220F15 4.5 2.7 > Applications

Contextual Info: 2SK2937 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-560C Z 4th. Edition June 1, 1998 Features • Low on-resistance Rds =0.026 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO-220FM

RJK0703DPP-E0

Contextual Info: Preliminary Datasheet RJK0703DPP-E0 R07DS0630EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 70 V, 70 A, 6.7 m Features •    High speed switching Low drive current Low on-resistance RDS on = 5.3 m typ. (at VGS = 10 V) Package TO-220FP Outline

"nichicon na series"

Abstract: SCHOTTKY 20V 2A S65B
Contextual Info: LM3475 LM3475 Hysteretic PFET Buck Controller Literature Number: SNVS239A LM3475 Hysteretic PFET Buck Controller General Description Features The LM3475 is a hysteretic P-FET buck controller designed to support a wide range of high efficiency applications in a

gutre

Abstract: 2SK1449
Contextual Info: Ordering n u m b e r:EN 3452 2SK1449 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum Ratings at Ta = 25°C Drain to Source Voltage VdSS Gate to Source Voltage