FET PR 32 Search Results

microwave fet

Contextual Info: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure

MGFC36V3742A

Abstract: 42GH 12api
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V3742A pRÔrîî oot^St«SS^,;Cha"9e' 'C-3^' .u îir t C 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET D ESC RIPTIO N O U TLIN E DRAW IN G The MGFC36V3742A is an internally impedance-matched U n it : m illim eters inch e s)

Contextual Info: TGS8122-SCC 8- TO 11-GHz SPDT FET SWITCH AP PR O VAL 5074 • 0.9-dB Typical Insertion Loss • 40-dB Typical Isolation at 9 GHz • 1.5:1 Typical Input SWR at Midband, 1.4:1 Typical Output SWR at Midband

TL 130 0837

Contextual Info: TGS8250-SCC DC TO 18-GHz SPDT FET SWITCH AP PR O VAL 5026 • 2-dB Typical Insertion Loss • 39-dB Typical Isolation Across Band • 2-ns Rise/Fall Time • 50-|jA Typical Current Consumption With Control Voltage of - 7 V, 0 V • Size: 1,8034x1,2700x0,1016 mm

Contextual Info: CU R AG RL-2260 Y FET US ENCY AP ED SA O PR V ALL IN ONE POWER TRANSFORMERS This series is manufactured to meet UL, CSA, VDE and This series is manufactured to meet UL, CSA, IEC specifications. Low interwinding capacitance and the VDE and IEC specifications. Low interwinding

Contextual Info: US CU R AG RL-2271 Y FET SA ENCY AP ED O PR V RLD-2271 TWO IN ONE TRIPLE OUTPUT POWER TRANSFORMERS • CHASSIS MOUNT The RL-2271 and RLD-2271 Series Power Transformers have a triple output designed for 5VDC and ±12VDC or ±15VDC regulated power supplies. These transformers with

Contextual Info: t 67C 00233 T? 4613303 HUGHES AIRCRAFT CO* HUGHES-, MICROWAVE PRDTS D* 7 ~ 3 9 - G S ~ □□□□233 fl | G aA sFET PR OD U CTS DESCRIPTION Hughes model number C2421H-1300 and C2422H-1300 are single cell and dual cell 13 GHz broadband GaAs power FET chips mounted on internally matched chip carriers. The

Contextual Info: TGS8704-SCC DC TO 6-GHz FET SWITCH AP PR O VAL 5026 • Absorptive Topology • 1.2-dB Insertion Loss and 45-dB Isolation at Midband • 1.3:1 Input SWR and 1.2:1 Output SWR at Midband • Greater Than 0.5-W Input Power at 1-dB Compression • Size: 1,092 x 0,990 x 0,152 mm

Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm ■ Features 9.00±0.20 7.00±0.20 48 33 32 64 17 9.00±0.20 y 16 1.40±0.10 1 0.40 0.16+0.10 –0.05 1.00 Seating plane 0.10±0.10 0.15 +0.10 –0.05 (0.50)

TR218

Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm ■ Features 9.00±0.20 7.00±0.20 48 33 32 64 17 9.00±0.20 y 16 1.40±0.10 1 0.40 0.16+0.10 –0.05 1.00 Seating plane 0.10±0.10 0.15 +0.10 –0.05 (0.50)

Contextual Info: MITSUMI Protection for Lithium-Ion/Lithium Polymer Batteries 1 cell MM3099 Series Protection for Lithium-Ion/Lithium Polymer Batteries (1 cell) Monolithic IC MM3099 Series April 26, 2004 Outline ts This is a protection IC developed for use with 1-serial cell lithium-ion/lithium polymer rechargeable batteries.

icl7644

Contextual Info: ICL7644, ICL7645 ÌCL7646, ICL7647 H A R R IS S E M I C O N D U C T O R Low Voltage Step-Up Converters May 1992 Features Description • +5V at 40mA From a 1.5V Source The ICL7644, ICL7645 and ICL7646 are low power fixed +5V output step-up DC-DC converters designed for

8438 Series

Abstract: DINS4 uC 8438 D1NS4 diode M1 transistor 8437 diode cc 471k S-8438 S-8437 S-8437AF
Contextual Info: Contents Features .1 Block Pin Assignment .2

Contextual Info: , - Ì991 IC L 6 4 4 /6 4 5 /6 4 6 /6 4 7 IC L 7 6 4 4 /7 645/7646/7647 S HARRIS Low Voltage S tep -U p Converters j u i y 1991 Features D escription • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V output s te p -u p D C -D C converters designed for operation

Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at

f g megamos

Contextual Info: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC5041 P r o g r a m m a b l e DC-DC C o n v e r t e r f or P e n t i u m P55C, K6 , and 6 x 8 6 M X ™ M 2 P r o c e s s o r s • Programmable output from 2.1V to 3.5V using integrated

8327 Series

Abstract: 8327 transistor 1440-PR 303UC 2SD1624T S-8323 S-8323A25MC-ELF-T2 S-8323A27MC-ELH-T2 S-8323A30MC-ELK-T2 S-8327
Contextual Info: Rev. 7.2_20 SMALL PACKAGE PWM CONTROL STEP-UP SWITCHING REGULATOR S-8323/8327 Series „ Features • Low current consumption : During operation: 17.2 µA typ. (VOUT = 3 V, 50 kHz) During shutdown: 0.5 µA (max.) • Duty ratio: Built-in PWM control circuit

8328 Series

Abstract: S-8328B24MC-EWE-T2 t 8328 303UC S-8328B24MC 2SD1624T S-8324 S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2
Contextual Info: Rev. 7.2_10 SMALL PACKAGE PWM/PFM CONTROL STEP-UP SWITCHING REGULATOR S-8324/8328 Series „Features • Low current consumption: During operation: 17.2 µA typ. (VOUT = 3 V, 50 kHz) During shutdown: 0.5 µA (max.) 10.4 µA ( typ.) (VOUT = 3 V, 50 kHz, no load)

TA-NWT-000909

Contextual Info: Advance Data Sheet February 1996 = = A fW r «1 Microelectronics A T T L 8 5 7 1 A S L IC ’ammmmmf’-'TwmmmmmMMnmMm Features Introduction • Ringing generator for 5 REN The ATTL8571A is designed to be used with ATTL8570A electronic Subscriber Loop Interface Cir­

TDA1400

Abstract: TRIPATH tripath for car audio amplifiers 100w car amplifier AV RF modulator class t amplifier DIODE V10-20 tripath for car audio FQP19N10 FQP22P10
Contextual Info: Tri pat h Tec hnol og y, I nc. - Pr elimi nar y I nform at ion TDA1400 MONO CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Preliminary Information Revision 0.65 – February 2006 GENERAL DESCRIPTION The TDA1400 is a one-channel, Amplifier Driver that uses Tripath’s proprietary Digital Power Processing

MC5807

Abstract: MC-5806A mc5806a MC5805 MC-5807 MC-5806B 5806B MC-5805
Contextual Info: SEC THIN FILM HYBRID 1C MC-5806A/B PRELIMINARY 12 GHz LNA Modules PHYSICAL DIMENSIONS FEATURES • WIDE BANDWIDTH: 11.7 - 12.2 GHz • LOW NOISE: 2.2 dB TYP for MC-5806A 3.0 dB TYP for MC-5806B Units in mm T T I 10.0±0.5 8.0±0.5 _ L • HIGH GAIN: 17 dB

300 Amp mosfet

Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH

IR7811

Abstract: 1N4148 1N5819 SC1405 SC1405CTS SC1406G
Contextual Info: SC1405CTS High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405CTS is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns

laptop battery diagram schematic

Abstract: philips rf choke ferrite 4C4 ferrite ic 4060
Contextual Info: a High Efficiency Notebook Computer Power Supply Controller Preliminary Technical Data ADP3020 FEATURES Wide Input Voltage Range: 5.5 V to 25 V High Conversion Efficiency > 96% Integrated Current Sense – No External Resistor Required Low Shutdown Current: < 8 µA Typical