FET AMPLIFIER SCHEMATIC Search Results

IL062

Abstract: IL062N TL062C IL062D il0621
Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

TL074

Abstract: TL074 equivalent ic TL074
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL074 LINEAR INTEGRATED CIRCUIT LOW NOISE QUAD J-FET OPERATIONAL AMPLIFIER  DESCRIPTION The UTC TL074 is a high speed J-FET input quad operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic

BF245 A spice

Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
Contextual Info: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and

pmt amplifier circuit

Abstract: OPA642 OPA651 OPA655 OPA655P OPA655U OPA658
Contextual Info: OPA655 OPA 655 OPA 655 Wideband, Unity Gain Stable, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● 400MHz UNITY GAIN BANDWIDTH The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input stage to offer an ultra high dynamic range amplifier

Contextual Info: OPA655 B U R R - B R O W N <i [ ] Wideband, Unity Gain Stable, FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input stage to offer an ultra high dynamic range amplifier

QN34

Abstract: QP-42 ha j2 vertical JFET QN77 HA2-5160-2 HA2-5160-5 HA-5160 HP5082-2810 QN-35
Contextual Info: HA-5160 Data Sheet September 1998 File Number 2911.3 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier Features The HA-5160 is a wideband, uncompensated, operational amplifier with FET/Bipolar technologies and Dielectric Isolation. This monolithic amplifier features superior high

hp5082-2810

Abstract: MARKING D53 HA-5160 uncompensated operational amplifier d54 marking 2N4416 HA2-5160-5
Contextual Info: HA-5160 Data Sheet November 30, 2005 FN2911.6 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier Features The HA-5160 is a wideband, uncompensated, operational amplifier with FET/Bipolar technologies and Dielectric Isolation. This monolithic amplifier features superior high

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

Contextual Info: D−8 DDA−8 DGN−8 THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER Check for Samples: THS4631 FEATURES DESCRIPTION • The THS4631 is a high-speed, FET-input operational

NE34018 equivalent

Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and

TL061

Abstract: TL061I TL061C TL061IN TL061M TL061A TL061B
Contextual Info: TL061 TL061A - TL061B LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW POWER CONSUMPTION : 200µA WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT

LH0032CG

Abstract: lh0032 LH0032G AN 5265 LH0032C LH0032G nsc AN-253 AN-277 C1996 AN2537
Contextual Info: LH0032 Ultra Fast FET-Input Operational Amplifier General Description Features The LH0032 is a high slew rate high input impedance differential operational amplifier suitable for diverse applications in fast signal handling The high allowable differential input

MHW2707A1

Abstract: Motorola UHF Power Amplifier Module 555 motorola bsc 25 01 n MOTOROLA RF MODULE 301AL motorola rf power module
Contextual Info: MOTOROLA Order this document by MHW2707A/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier MHW2707A1 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios.

Contextual Info: 17313bS DDEbMMÔ S3R OPA655 BU RR - BROW N Wideband FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH • LOW INPUT BIAS CURRENT: 5pA The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input

Contextual Info: / T 7 SGS-THOMSON *7M, Einö i[Li BTMn(g@ TL082 TL082A - TL082B GENERAL PURPOSE J-FET DUAL OPERATIONAL AMPLIFIER . WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT . OUTPUT SHORT-CIRCUIT PROTECTION . HIGH INPUT IMPEDANCE J-FET INPUT

Contextual Info: December 1995 LF351 Wide Bandwidth JFET Input Operational Amplifier General Description The LF351 is a low cost high speed JFET input operational amplifier with an internally trimmed input offset voltage BI-FET II technology . The device requires a low supply

Contextual Info: TL081 National Semiconductor TL081 Wide Bandwidth JFET Input Operational Amplifier General Description The TL081 is a low cost high speed JFET input operational amplifier with an internally trimmed input offset voltage BI-FET I|tm technology . The device requires a low supply

MHW2707-1

Abstract: Motorola UHF Power Amplifier Module 555 motorola mhw2707 301AL
Contextual Info: MOTOROLA Order this document by MHW2707/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier MHW2707-1 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 Volt Characteristics:

HA-5170

Abstract: AN540 HA2-5170-5 HA7-5170-5
Contextual Info: HA-5170 Data Sheet September 1998 File Number 2912.3 8MHz, Precision, JFET Input Operational Amplifier Features The Intersil HA-5170 is a precision, JFET input, operational amplifier which features low noise, low offset voltage and low offset voltage drift. Constructed using FET/Bipolar

LH0022

Abstract: LHOO42C LHOO42 uv Photocell LH0042 LH0042CH 5557 pin-compatible H08D LH0022C LH0042C
Contextual Info: National LH0042 < 9 Semiconductor LH0042 Low Cost FET Op Amp General Description The LH0042 is a FET input operational amplifier with very high input impedance and low input currents with no com­ promise in noise, common mode rejection ratio, open loop gain, or slew rate. The LH0042 is internally compensated

LH0032

Abstract: LH0032CG Calogic am9710 2N3907 h12a LH0032C LH0032G LM113 H12A TO8-12
Contextual Info: Ultra Fast FET-Input Operational Amplifier LLC LH0032 / LH0032C FEATURES GENERAL DESCRIPTION • 500V/µs Slew Rate Bandwidth • 70MHz 12 Ω Input Impedance • 10 • As Low as 2mV Max Input Offset Voltage • FET Input Null with Single Pot • Offset • No Compensation for Gains Above 50

5170

Abstract: HA7-5170-5 ha-5170 AN540 TB379
Contextual Info: HA-5170 TM Data Sheet July 2000 File Number 2912.4 8MHz, Precision, JFET Input Operational Amplifier Features The Intersil HA-5170 is a precision, JFET input, operational amplifier which features low noise, low offset voltage and low offset voltage drift. Constructed using FET/Bipolar

Contextual Info: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC-DC converters • General purpose power amplifier

MIL-G-5541C

Abstract: ALY Transistor MARKING transistor ALY 36 teledyne 175-5 transistor ALY 383 teledyne ALY TRANSISTOR teledyne transistor ALY MARKING ALY TRANSISTOR 40
Contextual Info: Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC/PSA 2009 Series Features Description Pin Configuration • Low Distortion: IP 3 = +40 dBm Typ • • • • The 2009 Series is a thin-film GaAs FET RF amplifier for high output power and low noise