FET 793 Search Results

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U nit; n il lt r FEATURES • • Class A operation

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

XP134A02A1SR

Contextual Info: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.11Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOP-8 Package

TEkelec

Contextual Info: AMPLIFIERS Selection guide AMPLIFIERS Selection guide THIN FILM GaAs FET SURFACE MOUNT 5 - 2700MHz THIN FILM GaAs FET TO8 400 - 4500MHz THIN FILM BIPOLAR TO8 1 - 2100 MHz THIN FILM FLAT PACK 1 - 2000MHz THICK FILM 5 - 600MHz MODULAR 0.05 - 3000 MHz SALES OFFICES

an 17830

Abstract: S3V 83 an 17830 a
Contextual Info: HEXAWAVE HWL30NPA Hexawave, Inc. L-Band Medium Power GaAs FET Description Outline Dimensions The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

BUK764R0-75C

Contextual Info: BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 01 — 17 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.

BUK75

Abstract: BUK754R3-75C BUK7E4R3-75C
Contextual Info: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

BUK764R0-75C

Contextual Info: D2 PA K BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed

L-Band

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

Contextual Info: D2 PA K BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed

BUK75

Abstract: BUK7E4R3-75C
Contextual Info: I2P AK BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

Contextual Info: I2P AK BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

FLK107XV

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

FET 913

Abstract: FLK107XV
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band

Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band