FET 1127 Search Results

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: Datasheet Power LSI series for Digital Camera and Digital Video Camera 7ch Integrated FET System Switching Regulator + 1ch LDO BD9381GUL ●Function block diagram ●Outline 7-channel Switching Regulator Controller for Digital Camera that contains an internal FET, 1-Channel LDO and 1-Channel

Contextual Info: Datasheet Power LSI series for Digital Camera and Digital Video Camera 7ch Integrated FET System Switching Regulator + 1ch LDO BD9381GUL ●Function block diagram ●Outline 7-channel Switching Regulator Controller for Digital Camera that contains an internal FET, 1-Channel LDO and 1-Channel

sot669 footprint

Abstract: PH3230S
Contextual Info: PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: WTELEDYNE COMPONENTS VQ1000 N-CHANNEL ENHANCEMENT-MODE QUAD DMOS POWER FET ARRAY FEATURES • ■ ■ ■ Inherent Current Sharing Capability when Paralleled Simple Straightforward DC Biasing Extended Safe Operating Area CMOS and TTL Compatible APPLICATIONS

PH3230S

Contextual Info: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 02 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package. Product availability: PH3230S in SOT669 LFPAK .

60f30

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

PH3230S

Contextual Info: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 03 — 02 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible

GRM188B11A105KA61

Abstract: NR4012-4R7M HSON8 GRM31CB31E106KA75L GRM31CB31
Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET No.09027EBT05 BD8313HFN Description ROHM’s Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK2826 TO-220AB FEATURES 2SK2826-S TO-262 • Super Low On-State Resistance

GRM188B11A105KA61

Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN ● General Description ROHM’s Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET

Contextual Info: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A

GRM188B11A105KA61

Contextual Info: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.11027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,

Contextual Info: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.13027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,

Contextual Info: Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.13027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,

Contextual Info: BD8313HFN Single-chip Type with Built-in FET Switching Regulators Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8313HFN No.11027EET05 ●Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell,

NR4012-4R7M

Abstract: r462 HSON8 grm31cbe106ka75l GRM188B11A105KA61
Contextual Info: Single-chip Type with Built-in FET Switching Regulator Series Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET No.10027ECT05 BD8313HFN Description BD8313HFN produces step-down output including 1.2, 1.8, 3.3, or 5 V from 4 batteries, batteries such as Li2cell or Li3cell, etc.

Contextual Info: 3SK297 Silicon N-Channel Dual Gate MOS FET HITACHI Application U H F /V H F RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 1. 2. 3. 4. 1120 Source Gatel Gate2 Drain ADE-208-389

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

BZV55C6V2

Contextual Info: AN379 Application Note Design Guide for a CS1680 Dimmable LED Driver IC for Low-voltage Lighting 1 Overview of the CS1680 The CS1680 is a cascade boost-buck dimmable LED driver for the 12V halogen lamp-replacement market. The CS1680 uses a Cirrus Logic proprietary intelligent digital control that provides exceptional single-lamp and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

tda 8275

Abstract: tda 8875 TDA 11136 IC tda 2001
Contextual Info: bq2085-V1P3 www.ti.com SLUS598 − FEBRUARY 2004 SBSĆCOMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311 FEATURES D Provides Accurate Measurement of Available D D D D D D D D Charge in Li-Ion and Li-Polymer Batteries Supports the Smart Battery Specification SBS V1.1