FER BEAD Search Results

AH51

Abstract: BT41 type bb12 and/transistor ah51
Contextual Info: v a TÀIYO M • FERRITE CORES/MAGNETS FER R ITE CORES BEAD TYPE gP < .394 in. Part tomber IR A H H B B RING CORES IN CASES and CLAMPS aD > .394 in. 10 mm OD < 394 in. (10 mm) Dimensions In.Amm) 0D L id .024-.118 .098-. 157 .028-.079 (0 6 -3 .0 ) (2.5-4.0)

Varistor y5s

Abstract: TLF12UA B 102 capacitor Radial Capacitor Y5S tlf25 BB 50-70 capacitor Y5S TLF12UB TLF12U
Contextual Info: • LEADED EMC COMPONENTS FER R ITE BEADS AXIAL AND RADIAL LEAD Impedance £2 min Part Number F B A 0 3 B B B -0 0 35 F B A 0 4 O H H -0 0 45-90 Dimensions ln./ mm W ,b D L max D C Resistance Rated Current (A) max (Q ) max 0.01 7.0 .098±.008 (2.5±0.2) .177±.0012

FBMJ4516

Abstract: FBMH4532 FBMH3225 BK1608H EM 4830 hs111 HM501 HM380
Contextual Info: p o r» [TAIYO] «ü a SURFACE MOUNT EMC COMPONENTS FE R R ITE CHIP BEADS BK & BK3216 Array Series: The BK series ferrite beads offer six material types HW, HM, HS, LL, LM, TS and the BK3216 Array series offers three (4M, 4S, 4L) with a wide range of impedance values to provide flexible EMI suppression solutions in

Filtres suppresseurs de transitoires

Abstract: zener diode catalogue ISO STANDARDS SHEET METAL ceramique zener diode catalog technologie des diode filtres ceramique
Contextual Info: FILTRES SUPPRESSEURS DE TRANSITOIRES TECHNOLOGY Interconnection of multilayer ceramic discoidal capacitors with inductors and Zener diode Tinned metal housing Mounting : threaded ISO I Sealing glass beads (V) Solder tag terminals. TRANSIENT SUPPRESSOR FILTERS

Contextual Info: M55339/34-30001 NOTES: 1. MATING: Interface dimensions per Mil-A-55339/TNC Series and Solitron/Microwave MD-108. 2. MATERIALS: All Metal parts except Contacts and Pin:-Contacts : Pin:-Glass Bead: Insulators : O'Ring: - 3. _Stainless Steel per AMS-5640

A500kHz

Abstract: VQE 24 led LU374
Contextual Info: LU374 TECHNOLOGY 4 .5 A, 500kHz S tep-D ow n Switching Regulator i€ A TU fi€ S D € S C R IP TIO • Constant 500kHz Switching Frequency ■ Easily Synchronizable ■ Uses Aii Surface Mount Components ■ inductor Size Reduced to 1.8|uH ■ Saturating Switch Design: 0.07a

HT 1000-4

Abstract: condensateur ceramique 104 ET 3005 D3008 capacite 335 ceramique DR3003 3049A 2021E filtres ceramique
Contextual Info: Sommaire Summary Filtres cellule en C C type filters FC 030 20 FC 030 Haute température –55°C +175°C FC 030 21 FC 030 Haute température – 55°C +175°C pour microboîtiers FC 030 High temperature –55°C +175°C FC 030 22- 23 FC 030 High temperature

transistor code x1

Contextual Info: PI6C3501 Low Power Spread Spectrum Frequency Multiplier Features Description • Produces a 4-time spread spectrum clock signal from input frequency • Operates on 2.5V or 3.3V Power Supply • 12MHz to 30MHz Input frequency range • Frequency Spreading Ratio : -1.2% Typical @ 66MHz output

RFPA3809

Abstract: cap 18pF 50V 10 0603 X7R RFMD PA LTE fer bead PAF-S05
Contextual Info: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features   High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug

92196a

Abstract: 0603HC-47NXJL
Contextual Info: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features   High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug

umk105cg101jv-f

Abstract: RF transceiver LTE RFPA3809 BLM18EG221SN1D AVX 0402 C0G PAF-S05-008 TAJA106K010R PAF-S05 CG180JV-F PA380X410
Contextual Info: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features   High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug

SHH-1M1608-121

Abstract: 401J SHU-1H4516-500J 1m1005 1S1005 SHB-1M1005-400 SHB-1M1005-600 SHB-1M1005-800 chipe array 202J
Contextual Info: Chip Ferrite Beads. 1. Effective for suppressing noise at high frequency, form several MHz to several hundreds MHz. 2. Chip type is suited for preventing the abnormal oscillation from high frequency amplifying circuits. 3. Terminal electrode has excellent solder heat resistance for soldering.

Contextual Info: 71M6533-DB Demo Board USER’S MANUAL Page: 1 of 75 ` REV 3 71M6533 3-Phase Energy Meter IC DEMO BOARD 71M6533-DB USER’S MANUAL Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent

Contextual Info: Chip Bead Array Chip Bead Array Type: EXC28B • Features ■ Recommended Applications ● Space saving ● SSOP package 0.5 mm pitch compatibility ● Small size and lightweight ● Small digital equipment such as PCs, printers, HDD, DVD-ROMs, CD-ROMs, LCDs.

transistor fp 1016

Abstract: et 1102 EB 1038 diode et 1103 FP-035 1041B-3 57fp FP030
Contextual Info: Sommaire Summary Filtres cellule en Pi Pi type filters Modèle / Format Page s Model / Size FP 030 56 - 57 FP 030 FP 035 FP 040 58 - 59 FP 035 FP 040 FP 060 60 - 61 FP 060 FP 100 28,5 VCC 115 V - 400 Hz 115 V - 200 Hz à 1000 Hz FP 100 62 - 65 FP 170 28,5 VCC

schema UP 5135

Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
Contextual Info: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €

7014 M

Abstract: 7045-3 7135 LA 7051 7034 LA 7036 7048
Contextual Info: Sommaire Summary Filtres cellule en T T type filters Modèle / Format Page s Model / Size FT 100 68 - 69 FT 100 FT 170 70 - 71 FT 170 FT 100 FILTERS T TYPE 28,5 Vcc (Vdc) DIAMETER 10 115 V - 400 Hz TECHNOLOGY Interconnection of multilayer ceramic discoidal capacitor and two inductors

Contextual Info: SPEC No. ISSUE: P R E L I M I MR 9 4 3 1 4 A IAK. 1 1995 N A R Y SPECIFICATIONS Product Type 32Mbit MAS K ROM LHMB 5 Rx x Model No. LH53B 32 RO ON SKThis device specification is subject to change »ithout notice. PRESENTED H. TSDGITA Dept. General lianager

F624-19Q1

Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier 13.56Mhz rf amplifier Class B power amplifier, 13.56MHz class e and 13.56MHz F624-19 power amplifier 13.56MHz 13.56MHZ mosfet
Contextual Info: ADVANCED W /Æ P o w e r M Te c h n o lo g y • R ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION 1-15MHz POWER MOS IV® N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET T he A R F 444 and AR F445 co m prise a sym m etric pair o f RF pow er transistors designed fo r push-pull scientific,

500w class d amplifier

Abstract: n-channel 500w RF power mosfet
Contextual Info: A dvanced P o w er Te c h n o l o g y ARF450 Common Source Push-Pull Pair >u Advanced Information - OTS 71 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull

zd 405-MF

Abstract: indiana general
Contextual Info: ADVANCED PO W ER Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET T h e A R F 4 4 0 a n d A R F 4 4 1 c o m p ris e a s y m m e tric p a ir o f R F p o w e r tra n s is to rs d e s ig n e d fo r n a rro w -b a n d p u s h -p u ll

HFBR-5603

Abstract: HFBR-560 hssdc - db9 HFBR-5609
Contextual Info: GBIC Module Design Guidelines for Gigabit Ethernet and Fibre Channel Data Communication Applications Application Note 1158 Overview of Hewlett-Packard GBIC Modules GBIC is an acronym for Gigabit Interface Converter. GBICs are data communication modules that can be hot plugged into operating data

ARF442

Abstract: Class B power amplifier, 13.56MHz 13.56mhz class e power amplifier
Contextual Info: ADVANCED PO W ER Te c h n o l o g y ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

a5079

Abstract: 5174 3A5157 5103A 5111FS
Contextual Info: Sommaire Summary Filtres cellule en L L type filters Modèle / Format Page s FL 030 40 - 41 FL 030 FL 040 42 - 43 FL 040 FL 060 44 - 45 FL 060 FL 100 28,5 VCC 115 V - 200 Hz à 1000 Hz FL 100 46 - 51 FL 170 28,5 VCC 115 V - 200 Hz à 1000 Hz Model / Size