FE SOT223 Search Results

fzt968

Abstract: LB1400
Contextual Info: SOT223 PNP SIUCON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 - OCTOBER L- -FE A T U R E S * * * Extrem ely low equivalent on-resistance; RCE(sat) 44mfi at 5A

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

FZT2222A

Abstract: FZT2222
Contextual Info: FZT2222 FZT2222A SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR FEATURES * H fe SPECIFIED UP TO 500mA. * VERY LOW SATURATION VOLTAGE. * COMPLEMENTARY TYPE FZT2222 FZT2222A PARTMARKING DETAILS FZT2222 FZT2222A = = = = FZT2907 FZT2907A FZT2222 FZT2222A ABSOLUTE M A X IM U M RATINGS

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORM ANCE TRANSISTOR FZT857 ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Am ps continuous collector current, up to 5 Am p peak * VCEO = 300V * Very low saturation voltage * Excellent h FE specified up to 3 Am ps

FZT851

Abstract: FZT853 DS-310
Contextual Info: FZT851 SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS _ FZT853 PRO V ISIO N A L DATA FEATURES * 6A C O N T IN U O U S COLLECTOR CURRENT * UPTO 20A PEAK COLLECTOR CURRENT * VERY LOW SATU RATIO N VO LTAG ES * EXCELLENT H fe CH ARACTERISTICS

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FZT755 ISSUE 5 – M ARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent h FE specified up to 1A pulsed . C E COM PLEM ENTARY TYPE – PARTM ARKING DETAIL – FZT655 FZT755 C B ABSOLUTE M AXIM UM RATINGS.

FZT600

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A

EM 00001

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996_ FE A T U R E S * L o w s a tu ra tio n vo lta g e * 300V V CE0 CO M PLEM ENTARY TYPE - FZT657 PARTM ARKING DETAIL - FZT757 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G IS S U E 3 - O C TO BER 1995_ FE A T U R E S * Very low RDs oni = -33£2 A PPLICA TIO N S * DC - DC Converters * Solenoids/Relay D rivers for Autom otive PARTM ARKIN G D ETA IL -

FZT705

Contextual Info: FZT705 SOT223 PIMP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FEATURES * 2W POWER DISSIPATION. * 2A C O N TIN U O U S lc. * 4A PEAK lc. * GUARANTEED H fe SPECIFIED UP TO 2A. * COMPLEM ENTARY T Y P E -F Z T 6 0 5 PARTMARKING DETAIL - FZT705 ABSOLUTE M A XIM U M RATINGS

Contextual Info: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer

BCP56

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 O_ FE A T U R E S * Suitable for A F drivers and output stages * High collector current and Low Vc£ sat C O M PLEM EN TA R Y T Y P E PA RTM A RKIN G D E T A ILS - BCP53

Contextual Info: • Philips Semiconductors t>b53T31 0024804 483 HIAPX N AUER PHILIPS/DISCRETE Product specification b?E PNP 5 GHz wideband transistor c BFG31 PINNING FE A T U R E S • High output voltage capability PIN • High gain bandwidth product 1 emitter DESCRIPTION

BUK107-50GL

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level TOPFET DESCRIPTION M onolithic overload protected logic level p ow er M O S FE T in a surface m ount plastic envelope, intended as a general purpose sw itch for autom otive system s and other

ZVN4306V

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - APRIL 1998 ZVN4306GV - FE A TU R E S * * B V d s s = 60 V * R e p e titiv e A v a la n c h e R a tin g D RDS ON = °-33ii A P P L IC A T IO N S f l H *

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545G ISSUE 1 - MARCH 98_ _ FE A TU R E S ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL D ra in -S o u r c e V o lta g e V ds C o n tin u o u s D ra in C u rr e n t a t T amb=25°C

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IS S U E 3 - A U G U S T 1995 BCP53 O FE A T U R E S * Suitable for A F drivers and output stages * High collector current and Low VCE sat| C O M PLEM EN TA R Y T Y P E PARTM ARKIN G D E T A ILS - BCP56 BCP53

Contextual Info: 5RO/223 thru 15RO/223 PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: Optimized for 12V and 15V auxiliary output power supplies. The EPION series has been designed to provide low forward voltage

MMT458

Abstract: MT458 t458
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996 FE A T U R E S * 400 V o it V,CEO C O M P L E M E N T A R Y TY P E - FZ T 5 58 P A R T M A R K IN G D E TA IL - FZ T 4 58 ABSOLUTE MAXIMUM RATINGS, PARAMETER SYM BOL Collector-Base Voltage

Contextual Info: Philips Semiconductors Product specification P o w e r M O S transistor BUK482-200A QUICK RE FE R E N C E DATA G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile

Contextual Info: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V

SNN01Z10

Contextual Info: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V

Contextual Info: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V