FDU6N20 Search Results

FDU6N20 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDU6N20		Fairchild Semiconductor	N-Channel MOSFET	Original	PDF	336.13KB	9

FDU6N20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDD6N20 Abstract: FDD6N20TF FDD6N20TM FDU6N20 fdu6n20tu Contextual Info: UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N20 FDU6N20 FDU6N20 FDD6N20TF FDD6N20TM fdu6n20tu	PDF
Contextual Info: UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N20 FDU6N20 FDU6N20	PDF
N mosfet 100v 200A Abstract: FDD6N20 FDD6N20TF FDD6N20TM FDU6N20 Contextual Info: UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N20TM FDD6N20TM FDD6N20 FDU6N20 N mosfet 100v 200A FDD6N20TF	PDF

Catalog Datasheet

Type

Document Tags

PDF

FDD6N20

Abstract: FDD6N20TF FDD6N20TM FDU6N20 fdu6n20tu
Contextual Info: UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FDD6N20 FDU6N20 FDU6N20 FDD6N20TF FDD6N20TM fdu6n20tu

PDF

Contextual Info: UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FDD6N20 FDU6N20 FDU6N20

PDF

N mosfet 100v 200A

Abstract: FDD6N20 FDD6N20TF FDD6N20TM FDU6N20
Contextual Info: UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS on = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FDD6N20TM FDD6N20TM FDD6N20 FDU6N20 N mosfet 100v 200A FDD6N20TF

PDF