FDT 1.5 Search Results

PLC PS4-341-MM1

Abstract: york chillers PS4-341-MM1 MOELLER PS4-201-MM1 wiring diagram DOL starter PLC Moeller IZM 32 old york chillers ps4-341-mm1 danfoss compressor JS84E
Contextual Info: www.moeller.net www.moeller.net Automation solutions in machine and system building The New FDT-Navigator: Everything Remote – Diagnostics, Operation, Parameterization! NZM circuit-breakers ———— IZM circuit-breakers ———— Power distribution

50er

Abstract: 70V27L
Contextual Info: fdt Integrated Device Technology, Inc. PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Industrial: 35ns max.)

fa7703

Abstract: IN26 IN114 TSSOP-16 2200P
Contextual Info: FA7703/04 FA7703/7704 FUJI Power Supply Control IC DC/DC Power Supply control IC FA7703/7704 Application Note June-2010 Fuji Electric Systems Co.,Ltd. Fuji Electric Systems Co., Ltd. AN-057E Rev.1.0 Jun-2010 1 http://www.fujielectric.co.jp/fdt/scd/ FA7703/04

Contextual Info: ft fdt BiCameral CacheRAM™ 288K 16K x 9 x 2) FOR RISC CACHES PRELIMINARY IDT71B229S Integrated Devi ce Technology, Inc. FEATURES: DESCRIPTION: Supports the R3000, R3500 and R3001 to 40MHz Bicam eral organization-. — Split instruction/data cache support

HDR-EC26FDT

Abstract: HDR-EC14FDT 15 pin d type male PCB connector
Contextual Info: 0.8mm pitch connector For PCB Straight through hole type female connector for PCB HDR-EC FDT( )-( )+ Straight Through hole EMI shielded ● Configuration of product Part No. HDR- EC ( ) FD T ( )- ( )+ ➀ ➁ ➂ ➃ ➄ ➅ ➀ Series name ➅ Lock screw

Contextual Info: I :ÏW 'N æ» LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT fdt) IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache • Fast access times: — 10/12/15/20ns • Low standby current (maximum):

A12LC

Contextual Info: PN ? fdt HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V08S/L Integrated Devi« Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35ns max.)

Contextual Info: BvNf fdt HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM IDT7026S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Military: 20/25/35/55ns max.)

FA7764P

Abstract: FA7764 fuji capacitor 220uF 10V FA7764n FA7764AN fa7738 3.1v ZENER DIODE SD833-06 PWM converter DC-DC 24v 5v DIP-8 FA7738N
Contextual Info: FA7764 FUJI Power Supply Control IC DC/DC Power Supply control IC FA7764 Application Note June-2010 Fuji Electric Systems Co.,Ltd Fuji Electric Systems Co., Ltd. AN-059E Rev.1.0 June.2010 1 http://www.fujielectric.co.jp/fdt/scd/ FA7764 WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as

5R82

Contextual Info: SvNjp fdt HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Integrated Device Technology, Inc. FEATURES: • • • • • more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Busy and Interrupt Flag Devices are capable of withstanding greater than 2001V

ic 555 timer 10 minute

Abstract: FA7711V AN-060E fa7711 555 timer for boost converter Boost Converter
Contextual Info: FA7711V FUJI Power Supply Control IC DC/DC Power Supply control IC FA7711V Application Note June-2010 Fuji Electric Systems Co.,Ltd. Fuji Electric Systems Co., Ltd. AN-060E Rev.1.0 Jun-2010 1 http://www.fujielectric.co.jp/fdt/scd/ FA7711V WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as of

OV2650

Abstract: IC-2650
Contextual Info: ¡SS'N fdt 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS IDT54/74FCT3245/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 M IC R O N C M O S Technology • E SD > 2 0 0 0 V per M IL -S TD -883, Method 3015; > 2 0 0V using m achine model C = 200pF, R = 0)

P4036

Contextual Info: ggTx fdt 64K X 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7MP4036 Integrated Dev Ice Technology, Inc. FEATURES: DESCRIPTION: • High density 2 M egabit C M O S static RAM module • Low profile 6 4 pin Z IP Zig-zag In-line vertical Package) or a 64-pin S IM M (Single In-line Mem ory Module)

T-827

Contextual Info: IDT 54/74FCT827A/B IDT 54/74FCT828A/B* HIGH-PERFORMANCE CMOS BUFFERS fdt Intesrated DeviceTechnology Inc FEATURES: DESCRIPTION: • F a s te r th a n A M D 's A m 2 9 8 2 7 -2 8 s e rie s • E quivalent to A M D 's Am 29827-28 b ip o la r buffe rs in p in o u t/

FDT 1.5 hitachi

Abstract: REJ10B0022-0300H 0x000d0 DOS16M HS6400FDIW3S
Contextual Info: REJ10B0022-0300H Renesas FLASH Development Toolkit 3.2 ® ® ® for Windows 98SE/Me, Windows NT 4.0, Windows 2000 and Windows XP User’s Manual HS6400FDIW3S Renesas FLASH Microcomputer Programming System Rev.3.00 Revision Date: Jun. 24, 2004 Keep safety first in your circuit designs!

sd863

Abstract: SD863-10 3.0A SCHOTTKY BARRIER DIODE
Contextual Info: SD863-10 100V / 3.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark DD Applications Type No

SD862

Abstract: SD862-04
Contextual Info: SD862-04 40V / 2.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark DA Applications Type No

SD863-06

Abstract: sd863 mark DC
Contextual Info: SD863-06 60V / 3.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark DC Applications Type No

sd832

Abstract: 207DC
Contextual Info: SD832-03 30V / 2.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark BE Applications Type No

sd832

Abstract: SD832-04
Contextual Info: SD832-04 40V / 2.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark BF Applications Type No

sd863

Abstract: SD863-04
Contextual Info: SD863-04 40V / 3.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark DB Applications Type No

SCHOTTKY 20A 40V

Contextual Info: TS865C04R 45V/20A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

10A Schottky

Contextual Info: TS862C06R 60V/10A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

100v 20a schottky power diode

Contextual Info: TS865C10R 100V/20A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain