FDT 1.5 Search Results

PLC PS4-341-MM1

Abstract: york chillers PS4-341-MM1 MOELLER PS4-201-MM1 wiring diagram DOL starter PLC Moeller IZM 32 old york chillers ps4-341-mm1 danfoss compressor JS84E
Contextual Info: www.moeller.net www.moeller.net Automation solutions in machine and system building The New FDT-Navigator: Everything Remote – Diagnostics, Operation, Parameterization! NZM circuit-breakers ———— IZM circuit-breakers ———— Power distribution

50er

Abstract: 70V27L
Contextual Info: fdt Integrated Device Technology, Inc. PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Industrial: 35ns max.)

Contextual Info: ft fdt BiCameral CacheRAM™ 288K 16K x 9 x 2) FOR RISC CACHES PRELIMINARY IDT71B229S Integrated Devi ce Technology, Inc. FEATURES: DESCRIPTION: Supports the R3000, R3500 and R3001 to 40MHz Bicam eral organization-. — Split instruction/data cache support

HDR-EC26FDT

Abstract: HDR-EC14FDT 15 pin d type male PCB connector
Contextual Info: 0.8mm pitch connector For PCB Straight through hole type female connector for PCB HDR-EC FDT( )-( )+ Straight Through hole EMI shielded ● Configuration of product Part No. HDR- EC ( ) FD T ( )- ( )+ ➀ ➁ ➂ ➃ ➄ ➅ ➀ Series name ➅ Lock screw

Contextual Info: I :ÏW 'N æ» LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT fdt) IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache • Fast access times: — 10/12/15/20ns • Low standby current (maximum):

A12LC

Contextual Info: PN ? fdt HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V08S/L Integrated Devi« Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35ns max.)

Contextual Info: BvNf fdt HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM IDT7026S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Military: 20/25/35/55ns max.)

5R82

Contextual Info: SvNjp fdt HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Integrated Device Technology, Inc. FEATURES: • • • • • more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Busy and Interrupt Flag Devices are capable of withstanding greater than 2001V

OV2650

Abstract: IC-2650
Contextual Info: ¡SS'N fdt 3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS IDT54/74FCT3245/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 M IC R O N C M O S Technology • E SD > 2 0 0 0 V per M IL -S TD -883, Method 3015; > 2 0 0V using m achine model C = 200pF, R = 0)

T-827

Contextual Info: IDT 54/74FCT827A/B IDT 54/74FCT828A/B* HIGH-PERFORMANCE CMOS BUFFERS fdt Intesrated DeviceTechnology Inc FEATURES: DESCRIPTION: • F a s te r th a n A M D 's A m 2 9 8 2 7 -2 8 s e rie s • E quivalent to A M D 's Am 29827-28 b ip o la r buffe rs in p in o u t/

3104d

Contextual Info: 32K x 32 CacheRAM PRELIMINARY 3.3V SYNCHRONOUS SRAM WITH IDT71V432 BURST COUNTER, SINGLE CYCLE DESELECT fdt Integrated Dei/ice Technology, Inc. FEATURES: • 32 K x 32 m e m o ry c o n fig u ra tio n • S u p p o rts high p e rfo rm a n c e s y ste m sp e e d - 83 M H z

FDT 1.5 hitachi

Abstract: REJ10B0022-0300H 0x000d0 DOS16M HS6400FDIW3S
Contextual Info: REJ10B0022-0300H Renesas FLASH Development Toolkit 3.2 ® ® ® for Windows 98SE/Me, Windows NT 4.0, Windows 2000 and Windows XP User’s Manual HS6400FDIW3S Renesas FLASH Microcomputer Programming System Rev.3.00 Revision Date: Jun. 24, 2004 Keep safety first in your circuit designs!

SD862

Abstract: SD862-04
Contextual Info: SD862-04 40V / 2.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark DA Applications Type No

SD863-06

Abstract: sd863 mark DC
Contextual Info: SD863-06 60V / 3.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark DC Applications Type No

SCHOTTKY 20A 40V

Contextual Info: TS865C04R 45V/20A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

10A Schottky

Contextual Info: TS862C06R 60V/10A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

100v 20a schottky power diode

Contextual Info: TS865C10R 100V/20A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

10A Schottky

Contextual Info: TS862C04R 45V/10A [0401] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

TS868C10

Abstract: TS868C10R
Contextual Info: TS868C10R 100V/30A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

Contextual Info: TS865C06R 60V/20A [200509] 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode 0.9 ±0.3 Outline drawings, mm +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

Contextual Info: TS868C04R 45V/30A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

10A Schottky

Abstract: diode 100v 10a
Contextual Info: TS862C10R 100V/10A [200509] 0.9 ±0.3 Outline drawings, mm 1.5 Max Features Low IR Low VF Center tap connection 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Low IR Schottky barrier diode +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 Applications 1. Gate 2, 4. Drain

lmsp33

Abstract: murata ltcc filter LMSP33QM-B16 GB16-STD-A rx2 1150 SP10T lmsp3 LTCC Substrate MARK E2 SP10T switch
Contextual Info: LMSP33QM-B16 SP10T ASM GB16-STD-A <Block Diagram> Module outline Murata LMSP33QM-B16 is SP10T CMOS switch with GSM Tx Low Pass Filter function. TRx6 This module has six TRx port, which can be UMTS/CDMA Tx and Rx pass. TRx5 TRx4 TRx3 Key feature •  

NR8576AA

Abstract: NR8576AB NR8576
Contextual Info: NR8576 series Real-time Clock Modules OVERVIEW The NR8576 series devices are serial-interface type real-time clock modules with built-in crystal oscillator elements. They feature timer counter circuits that keep track of time from the current second to the current