FDS86141 Search Results
FDS86141 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDS86141 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7A 8-SOIC | Original | 7 |
FDS86141 Price and Stock
onsemi FDS86141MOSFET N-CH 100V 7A 8SOIC |
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FDS86141 | Cut Tape | 5,025 | 1 |
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FDS86141 | Reel | 2,500 | 11 Weeks | 2,500 |
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FDS86141 | 23,904 |
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FDS86141 | 9,000 | 7 |
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FDS86141 | 9,000 | 1 |
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FDS86141 | Cut Tape | 2,021 | 1 |
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FDS86141 | Reel | 20 Weeks | 2,500 |
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FDS86141 |
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FDS86141 | 1,140 |
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FDS86141 | 3,350 | 1 |
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FDS86141 | 2,500 |
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FDS86141 | 2,500 |
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FDS86141 | 20 Weeks | 2,500 |
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FDS86141 | 21 Weeks | 2,500 |
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FDS86141 | Cut Tape | 1,709 | 0 Weeks, 1 Days | 1 |
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FDS86141 | 18,971 |
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FDS86141 | 22 Weeks | 2,500 |
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FDS86141 | 22,500 |
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FDS86141 | 2,500 |
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Fairchild Semiconductor Corporation FDS86141NL |
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FDS86141NL | 18,500 |
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FDS86141 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 FDS86141 | |
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Contextual Info: FDS86141 N-Channel PowerTrench MOSFET 100 V, 7 A, 23 m Features General Description Maximum RDS on = 23 m at VGS = 10 V, ID = 7 A This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 | |
FDS86141Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 FDS86141 | |
FDS86141Contextual Info: FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDS86141 FDS86141 | |
FDS86141
Abstract: SOIC127P600 SOIC127P600X175-8M
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Original |
FDS86141 FDS86141 SOIC127P600 SOIC127P600X175-8M | |
wurth 744
Abstract: ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40
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Original |
com/an5043 AN5043, APP5043, Appnote5043, wurth 744 ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40 |