FDPF085N10A Search Results
FDPF085N10A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDPF085N10A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A TO-220F | Original | 9 |
FDPF085N10A Price and Stock
onsemi FDPF085N10AMOSFET N-CH 100V 40A TO220F |
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FDPF085N10A | Tube | 1,480 | 1 |
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FDPF085N10A | 1 |
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FDPF085N10A | 1,350 | 35 Weeks | 50 |
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Fairchild Semiconductor Corporation FDPF085N10AINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF085N10A | 250 |
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FDPF085N10A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDPF085N10A FDPF085N10A | |
fdpf085n10aContextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features General Description • RDS on = 6.5 mΩ ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDPF085N10A FDPF085N10A | |
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Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features Description • RDS on = 6.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
Original |
FDPF085N10A | |
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Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
Original |
FDPF085N10A |