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    FDP14N30 Search Results

    FDP14N30 Functional Equivalents (1)

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    Part Number Manufacturer Composite Price Description
    FQP14N30J69Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

    FDP14N30 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP14N30
    Fairchild Semiconductor 300V N-Channel MOSFET Original PDF 310.2KB 10

    FDP14N30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDPF14N30

    Abstract: FDP14N30
    Contextual Info: UniFET TM FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FDP14N30 FDPF14N30 FDPF14N30 PDF

    Contextual Info: TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS on = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FDP14N30 FDPF14N30 PDF