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    FDP032N08B Search Results

    FDP032N08B Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP032N08B
    		Fairchild Semiconductor N-CHANNEL POWERTRENCH MOSFET 80V Original PDF 798.51KB
    FDP032N08B_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 120A TO-220-3 Original PDF 10
    FDP032N08B-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 120A TO-220-3 Original PDF 782.54KB
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    FDP032N08B Price and Stock

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    onsemi FDP032N08B-F102

    MOSFET N-CH 80V 120A TO220-3
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    DigiKey FDP032N08B-F102 Tube 923 1
    • 1 $3.71
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    Avnet Americas FDP032N08B-F102 Tube 18 Weeks 800
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    Mouser Electronics FDP032N08B-F102 1,102
    • 1 $3.65
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    Verical FDP032N08B-F102 4,000 800
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    Newark FDP032N08B-F102 Bulk 800
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    Onlinecomponents.com FDP032N08B-F102
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    TME FDP032N08B-F102 1
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    Richardson RFPD FDP032N08B-F102 800
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    Flip Electronics FDP032N08B-F102 4,000
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    IBS Electronics FDP032N08B-F102 800
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    Fairchild Semiconductor Corporation FDP032N08B-F102

    Power Field-Effect Transistor, 120A, 80V, 0.0033ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDP032N08B-F102 35 1
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    onsemi FDP032N08B_F102

    NChannel PowerTrench MOSFET 80V 211A 33mO (Alt: FDP032N08B-F102)
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    Avnet Silica FDP032N08B_F102 19 Weeks 50
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    EBV Elektronik FDP032N08B_F102 20 Weeks 50
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    FDP032N08B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP032N08B N-Channel PowerTrench MOSFET 80 V, 211 A, 3.3 mΩ Features Description • RDS on = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP032N08B PDF

    8245 diode

    Abstract: FDP032N08B
    Contextual Info: FDP032N08B_F102 N-Channel PowerTrench MOSFET 80V, 211A, 3.3mΩ Features Description • RDS on = 2.85mΩ (Typ.)@ VGS = 10V, ID = 50A • Low reverse recovery charge, Qrr This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has


    Original     		PDF