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    FDMS86540 Search Results

    FDMS86540 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS86540
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 20A 8-PQFN Original PDF 7
    SF Impression Pixel

    FDMS86540 Price and Stock

    onsemi

    onsemi FDMS86540

    MOSFET N-CH 60V 20A/50A 8PQFN
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    DigiKey () FDMS86540 Cut Tape 20,975 1
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    FDMS86540 Digi-Reel 20,975 1
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    Wuhan P&S FDMS86540 9,000 1
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    onsemi FDMS86540 (POWERTRENCH)

    Mosfet, N-Ch, 60V, 129A, Power 56; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:129A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V Rohs Compliant: Yes |Onsemi FDMS86540
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    Newark FDMS86540 (POWERTRENCH) Cut Tape 5,391 1
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    onsemi FDMS86540-01

    FDMS86540 - N-Channel PowerTrench MOSFET 60V, 129A
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    Rochester Electronics FDMS86540-01 4,574 1
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    FDMS86540 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking DF FAIRCHILD

    Contextual Info: FDMS86540_F142 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features Description • RDS on = 2.7 m (Typ.) at VGS = 10 V, ID = 20 A • Low FOM RDS(on)*QG, Low Reverse-Recovery Charge, Qrr This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDMS86540 marking DF FAIRCHILD PDF

    Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description „ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original
    FDMS86540 PDF

    FDMS86540

    Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description „ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original
    FDMS86540 FDMS86540 PDF

    Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description ̈ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original
    FDMS86540 PDF