FDMS86540 Search Results
FDMS86540 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS86540 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 20A 8-PQFN | Original | 7 |
FDMS86540 Price and Stock
onsemi FDMS86540MOSFET N-CH 60V 20A/50A 8PQFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86540 | Cut Tape | 20,975 | 1 |
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FDMS86540 | Reel | 878 |
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FDMS86540 | 131 |
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FDMS86540 | 1,128 | 323 |
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FDMS86540 | Cut Strips | 736 | 16 Weeks | 1 |
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FDMS86540 | Cut Tape | 4,879 | 1 |
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FDMS86540 | Reel | 31 Weeks | 3,000 |
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FDMS86540 |
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FDMS86540 | 1,128 | 1 |
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FDMS86540 | 1 |
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FDMS86540 | 3,000 |
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FDMS86540 | 11,700 |
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FDMS86540 | 16 Weeks | 3,000 |
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FDMS86540 | 17 Weeks | 3,000 |
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FDMS86540 | 18 Weeks | 3,000 |
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FDMS86540 | 74,650 |
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FDMS86540 | 3,000 |
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FDMS86540 | 9,000 | 1 |
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onsemi FDMS86540-01FDMS86540 - N-Channel PowerTrench MOSFET 60V, 129A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86540-01 | 4,574 | 1 |
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FDMS86540 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking DF FAIRCHILDContextual Info: FDMS86540_F142 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features Description • RDS on = 2.7 m (Typ.) at VGS = 10 V, ID = 20 A • Low FOM RDS(on)*QG, Low Reverse-Recovery Charge, Qrr This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet |
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FDMS86540 marking DF FAIRCHILD | |
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Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86540 | |
FDMS86540Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86540 FDMS86540 | |
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Contextual Info: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description ̈ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86540 |