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    FDMS86320 Search Results

    FDMS86320 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS86320
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 10.5A 8-PQFN Original PDF 7
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    FDMS86320 Price and Stock

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    onsemi FDMS86320

    MOSFET N-CH 80V 10.5A/22A 8PQFN
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    DigiKey () FDMS86320 Cut Tape 18,731 1
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    FDMS86320 Digi-Reel 18,731 1
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    FDMS86320 Reel 15,000 3,000
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    Avnet Americas FDMS86320 Reel 15 Weeks 3,000
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    Mouser Electronics FDMS86320 8,014
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    Verical () FDMS86320 2,500 9
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    FDMS86320 1,476 331
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    Onlinecomponents.com FDMS86320
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    Rochester Electronics FDMS86320 1,476 1
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    Fairchild Semiconductor Corporation FDMS86320

    Power Field-Effect Transistor, 10.5A, 80V, 0.0117ohm, N-Channel, MOSFET, MO-240AA
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    Rochester Electronics FDMS86320 69 1
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    FDMS86320 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMS86320 PDF

    PQFN08A

    Contextual Info: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMS86320 PQFN08A PDF

    FDMS86320

    Contextual Info: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMS86320 FDMS86320 PDF

    Contextual Info: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMS86320 PDF