FDMS86163P Search Results
FDMS86163P Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDMS86163P |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 7.9A POWER56 | Original | 545.2KB |
FDMS86163P Price and Stock
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onsemi FDMS86163PMOSFET P-CH 100V 7.9A/50A 8PQFN |
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FDMS86163P | Cut Tape | 32,169 | 1 |
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FDMS86163P | Reel | 18 Weeks | 3,000 |
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FDMS86163P | 7,551 |
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FDMS86163P | 3,000 | 250 |
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FDMS86163P | Reel | 3,000 |
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FDMS86163P | Reel | 34 Weeks | 3,000 |
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FDMS86163P | 3,000 |
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FDMS86163P | 2,571 | 1 |
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FDMS86163P | 3,321 | 1 |
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FDMS86163P | 3,615 |
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FDMS86163P | 3,000 |
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FDMS86163P | 18 Weeks | 3,000 |
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FDMS86163P | 19 Weeks | 3,000 |
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FDMS86163P | Cut Tape | 581 | 0 Weeks, 1 Days | 1 |
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FDMS86163P | 63,500 |
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FDMS86163P | 20 Weeks | 3,000 |
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FDMS86163P | 3,000 |
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FDMS86163P | 195,000 | 3,000 |
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FDMS86163P | 3,000 |
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FDMS86163P | 15,000 | 1 |
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onsemi FDMS86163P-23507XFET -100V 22.0 MOHM PQFN56 |
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FDMS86163P-23507X | Reel |
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FDMS86163P-23507X | Reel | 45 Weeks | 3,000 |
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onsemi FDMS86163P (POWERTRENCH)Mosfet, P-Ch, -100V, -50A, Power56-8; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.8V Rohs Compliant: Yes |Onsemi FDMS86163P |
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FDMS86163P (POWERTRENCH) | Cut Tape | 20,143 | 5 |
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Fairchild Semiconductor Corporation FDMS86163P |
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FDMS86163P | 38 |
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FDMS86163P | 288,000 | 3,000 |
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FDMS86163P | 11,647 |
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FDMS86163P | 65,542 |
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FDMS86163P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMS86163P P-Channel PowerTrench MOSFET -100 V, -50 A, 22 mΩ Features General Description Max rDS on = 22 mΩ at VGS = -10 V, ID = -7.9 A Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has |
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FDMS86163P |