FDMS8560S Search Results
FDMS8560S Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS8560S |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 30A 8-PQFN | Original | 8 |
FDMS8560S Price and Stock
onsemi FDMS8560SMOSFET N-CH 25V 30A/70A 8PQFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS8560S | Tape & Reel |
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FDMS8560S | Cut Strips | 6 | 99 Weeks | 1 |
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FDMS8560S | 435 |
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Fairchild Semiconductor Corporation FDMS8560S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS8560S | 4,166 |
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FDMS8560S | 3,332 |
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FDMS8560S | 371 | 1 |
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FDMS8560S | 3,000 |
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FDMS8560S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have |
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Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have |
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FDMS8560S FDMS8560S | |
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Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have |
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FDMS8560S FDMS8560S |