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    FDMS3664S Search Results

    FDMS3664S Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS3664S
    		Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V DUAL 8-PQFN Original PDF 16
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    FDMS3664S Price and Stock

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    onsemi FDMS3664S

    MOSFET 2N-CH 30V 13A/25A POWER56
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    DigiKey () FDMS3664S Cut Tape 2,017 1
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    FDMS3664S Digi-Reel 2,017 1
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    FDMS3664S Reel 3,000
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    Avnet Americas FDMS3664S Reel 28 Weeks 3,000
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    Mouser Electronics FDMS3664S 14,105
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    FDMS3664S 3,000 393
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    FDMS3664S 2,967 393
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    Onlinecomponents.com FDMS3664S
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    Rochester Electronics FDMS3664S 5,967 1
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    TME FDMS3664S 2,938 1
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    Richardson RFPD FDMS3664S 3,000
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    Fairchild Semiconductor Corporation FDMS3664S

    MOSFET 2N-CH 30V 13A/25A 8-PQFN
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    Win Source Electronics FDMS3664S 15,000
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    FDMS3664S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3664S FDMS3664S PDF

    1201D

    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3664S FDMS3664S 1201D PDF

    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF

    ic 22cf

    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3664S FDMS3664S ic 22cf PDF