FDMS3664S Search Results
FDMS3664S Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS3664S |
|
FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V DUAL 8-PQFN | Original | 16 |
FDMS3664S Price and Stock
onsemi FDMS3664SMOSFET 2N-CH 30V 13A/25A POWER56 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
FDMS3664S | Digi-Reel | 2,017 | 1 |
|
Buy Now | |||||
|
FDMS3664S | Tape & Reel | 28 Weeks | 3,000 |
|
Buy Now | |||||
|
FDMS3664S | 14,108 |
|
Buy Now | |||||||
|
FDMS3664S | 3,000 | 393 |
|
Buy Now | ||||||
|
FDMS3664S | Tape & Reel | 3,000 |
|
Buy Now | ||||||
|
FDMS3664S |
|
Buy Now | ||||||||
|
FDMS3664S | 5,967 | 1 |
|
Buy Now | ||||||
|
FDMS3664S | 2,938 | 1 |
|
Buy Now | ||||||
|
FDMS3664S | 3,000 |
|
Buy Now | |||||||
|
FDMS3664S | 28 Weeks | 3,000 |
|
Get Quote | ||||||
|
FDMS3664S | 29 Weeks | 3,000 |
|
Buy Now | ||||||
|
FDMS3664S | 18,500 |
|
Get Quote | |||||||
|
FDMS3664S | 30 Weeks | 3,000 |
|
Buy Now | ||||||
|
FDMS3664S | 51,039 |
|
Get Quote | |||||||
Fairchild Semiconductor Corporation FDMS3664SMOSFET 2N-CH 30V 13A/25A 8-PQFN |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
FDMS3664S | 15,000 |
|
Buy Now | |||||||
FDMS3664S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally |
Original |
FDMS3664S FDMS3664S | |
1201DContextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally |
Original |
FDMS3664S FDMS3664S 1201D | |
|
Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally |
Original |
||
ic 22cfContextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally |
Original |
FDMS3664S FDMS3664S ic 22cf |