FDMS037N08B Search Results
FDMS037N08B Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDMS037N08B |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 100A 8QFN | Original | 10 |
FDMS037N08B Price and Stock
onsemi FDMS037N08BMOSFET N-CH 75V 100A 8PQFN |
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FDMS037N08B | Cut Tape | 3,458 | 1 |
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FDMS037N08B | Reel | 17 Weeks | 3,000 |
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FDMS037N08B | 2,369 |
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FDMS037N08B | 12,000 | 3,000 |
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FDMS037N08B | Reel | 3,000 |
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FDMS037N08B | Reel | 34 Weeks | 3,000 |
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FDMS037N08B |
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FDMS037N08B | 2,508 | 3 |
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FDMS037N08B | 2,006 |
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FDMS037N08B | 1 |
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FDMS037N08B | 3,000 |
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FDMS037N08B | 3,536 |
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FDMS037N08B | 17 Weeks | 3,000 |
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FDMS037N08B | 18 Weeks | 3,000 |
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FDMS037N08B | 19 Weeks | 3,000 |
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FDMS037N08B | 157 |
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FDMS037N08B | 2,620 | 1 |
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onsemi FDMS037N08B (POWERTRENCH)Mosfet, N-Ch, 75V, 100A, 104.2W, Power56; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(On):0.00301Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Rohs Compliant: Yes |Onsemi FDMS037N08B |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS037N08B (POWERTRENCH) | Cut Tape | 1 |
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onsemi FDMS037N08B-01FDMS037N08B - N-Channel PowerTrench MOSFET 75V, 100A |
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FDMS037N08B-01 | 32,893 | 1 |
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FDMS037N08B-01 | 101,999 |
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FDMS037N08B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMS037N08B N-Channel PowerTrench MOSFET 75V, 100A, 3.7mΩ Features Description • RDS on = 3.01mΩ (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet |
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FDMS037N08B FDMS037N08B | |
Contextual Info: FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 mΩ Features Description • RDS on = 3.01 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDMS037N08B | |
Contextual Info: FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 mΩ Features Description • RDS on = 3.01mΩ (Typ.)@ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDMS037N08B FDMS037N08B |