FDMD82100 Search Results

FDMD82100 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDMD82100		Fairchild Semiconductor	FETs - Arrays, Discrete Semiconductor Products, FET N-CH 100V 7A 12POWER	Original	PDF		7
FDMD82100L		ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 100V 7A 6-MLP	Original	PDF	453.89KB

FDMD82100 Price and Stock

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onsemi FDMD82100 MOSFET 2N-CH 100V 7A 12POWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FDMD82100	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	FDMD82100	Digi-Reel			1	1 $3.63 10 $3.63 100 $3.63 1000 $3.63 10000 $3.63	Buy Now
	FDMD82100	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	FDMD82100	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	FDMD82100				1	1 $3.86 10 $3.47 100 $2.75 1000 $2.56 10000 $2.56	Get Quote
onsemi FDMD82100L MOSFET 2N-CH 100V 7A 12POWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDMD82100L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	FDMD82100L	Cut Tape			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	FDMD82100L		47			1 $3.15 10 $2.10 100 $1.57 1000 $1.57 10000 $1.57	Buy Now
TME	FDMD82100L				1	1 $2.25 10 $2.02 100 $1.61 1000 $1.49 10000 $1.49	Get Quote
Chip Stock	FDMD82100L		4,272			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FDMD82100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDMD82100 Dual N-Channel Power Trench MOSFET 100 V, 7 A, 19 mΩ Features General Description Max rDS on = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance	Original	FDMD82100	PDF
Contextual Info: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain	Original	FDMD82100L	PDF
Contextual Info: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain	Original	FDMD82100L	PDF