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    FDMC8882 Search Results

    FDMC8882 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC8882
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP Original PDF 7
    SF Impression Pixel

    FDMC8882 Price and Stock

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    onsemi FDMC8882

    MOSFETs 30V N-Channel Power Trench 174 MOSFET
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    Mouser Electronics FDMC8882 296
    • 1 $0.90
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    Verical () FDMC8882 4,521 712
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    FDMC8882 3,619 712
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    FDMC8882 894 17
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    Arrow Electronics FDMC8882 Cut Strips 894 10 Weeks 1
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    Newark () FDMC8882 Cut Tape 390 1
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    FDMC8882 Reel 3,000
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    Bristol Electronics FDMC8882 20
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    Quest Components FDMC8882 3,656
    • 1 $1.19
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    Rochester Electronics FDMC8882 8,140 1
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    TME FDMC8882 1
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    Richardson RFPD FDMC8882 3,000
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    Avnet Asia FDMC8882 12,000 10 Weeks 3,000
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    Avnet Silica FDMC8882 11 Weeks 3,000
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    EBV Elektronik FDMC8882 12 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMC8882

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FDMC8882 185 5
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    Quest Components () FDMC8882 1,004
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    FDMC8882 148
    • 1 $1.50
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    Win Source Electronics FDMC8882 50,056
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    FDMC8882 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RG 710

    Abstract: FDMC8882 MO-229
    Contextual Info: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description „ Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC8882 RG 710 FDMC8882 MO-229 PDF

    RG 710

    Abstract: rg710 FDMC8882
    Contextual Info: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description „ Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC8882 FDMC8882 RG 710 rg710 PDF

    fairchild top marking

    Abstract: FDMC8882 MO-229 RG 710
    Contextual Info: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description „ Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC8882 fairchild top marking FDMC8882 MO-229 RG 710 PDF

    Contextual Info: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description „ Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC8882 FDMC8882 PDF

    SIR474

    Abstract: grm32er7ya106ka XRP7724
    Contextual Info: XRP7720/7724/7725EVB-DEMO-1 Quad Channel Digital PWM/PFM Demo Board Programmable Power Management System January 2014 GENERAL DESCRIPTION The XRP7720/7724/7725EVB-DEMO-1 board is a complete, four channel, power system. It provides 3.3V, 2.5V 1.5V and 1V at a


    Original     		XRP7720/7724/7725EVB-DEMO-1 XRP7720/7724/7725EVB-DEMO-1 SIR474 grm32er7ya106ka XRP7724 PDF