FDMC86261P Search Results
FDMC86261P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMC86261P |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 2.7A 8MLP | Original | 7 |
FDMC86261P Price and Stock
onsemi FDMC86261PMOSFET P-CH 150V 2.7A/9A 8MLP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86261P | Cut Tape | 5,825 | 1 |
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| FDMC86261P | Digi-Reel | 5,825 | 1 |
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| FDMC86261P | Tape & Reel | 3,000 | 3,000 |
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FDMC86261P | Tape & Reel | 3,000 | 33 Weeks | 3,000 |
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FDMC86261P | 6,550 |
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FDMC86261P | 2,350 | 7 |
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FDMC86261P | Cut Strips | 2,350 | 33 Weeks | 1 |
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FDMC86261P | Cut Tape | 6,569 | 1 |
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FDMC86261P | Reel | 33 Weeks | 3,000 |
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FDMC86261P |
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FDMC86261P | 1 |
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FDMC86261P | 443 |
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FDMC86261P | 20,892 |
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FDMC86261P | 34 Weeks | 3,000 |
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FDMC86261P | 35 Weeks | 3,000 |
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FDMC86261P | 3,000 | 1 |
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Fairchild Semiconductor Corporation FDMC86261PTrans MOSFET P-CH 150V 2.7A 8-Pin WDFN EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86261P | 20 |
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Get Quote | |||||||
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FDMC86261P | 121,000 |
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FDMC86261P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS on = 160 mΩ at VGS = -10 V, ID = -2.4 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild |
Original |
FDMC86261P | |
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Contextual Info: FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS on = 160 mΩ at VGS = -10 V, ID = -2.4 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild |
Original |
FDMC86261P | |
|
Contextual Info: FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS on = 160 mΩ at VGS = -10 V, ID = -2.4 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild |
Original |
FDMC86261P |