FDMC86248 Search Results
FDMC86248 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDMC86248 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 3.4A POWER33 | Original | 7 |
FDMC86248 Price and Stock
onsemi FDMC86248MOSFET N CH 150V 3.4A POWER33 |
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FDMC86248 | 18 Weeks | 3,000 |
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Fairchild Semiconductor Corporation FDMC86248 |
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FDMC86248 | 1,885 | 3 |
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FDMC86248 | 1,508 |
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FDMC86248 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description ̈ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMC86248 | |
Contextual Info: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMC86248 FDMC86248 | |
marking DF FAIRCHILD
Abstract: FDMC86248
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FDMC86248 FDMC86248 marking DF FAIRCHILD | |
Contextual Info: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article, |
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WP014 |