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    FDMC86244 Search Results

    FDMC86244 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86244
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.8A POWER33 Original PDF 7
    FDMC86244-L701
    onsemi FET 150V 134.0 MOHM MLP33 Original PDF 527.58KB 10
    SF Impression Pixel

    FDMC86244 Price and Stock

    onsemi

    onsemi FDMC86244

    N-Channel Power Trench? MOSFET 150V, 9.4a, 134mO - Tape and Reel (Alt: FDMC86244)
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    Avnet Americas () FDMC86244 Tape & Reel 3,000 22 Weeks 3,000
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    FDMC86244 Tape & Reel 1,786
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    Mouser Electronics FDMC86244 814
    • 1 $2.23
    • 10 $1.40
    • 100 $0.92
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    Verical () FDMC86244 3,410 482
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    FDMC86244 3,000 3,000
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    FDMC86244 2,500 482
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    Newark FDMC86244 Cut Tape 11,656 1
    • 1 $1.98
    • 10 $1.27
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    • 1000 $0.61
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    Future Electronics FDMC86244 Reel 24,000 22 Weeks 3,000
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    Onlinecomponents.com FDMC86244
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    Rochester Electronics FDMC86244 5,910 1
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    TME FDMC86244 1
    • 1 $1.72
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    • 100 $0.75
    • 1000 $0.62
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    Avnet Silica FDMC86244 15,000 23 Weeks 3,000
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    EBV Elektronik FDMC86244 24 Weeks 3,000
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    Flip Electronics FDMC86244 27,000
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    onsemi FDMC86244-L701

    - Tape and Reel (Alt: FDMC86244-L701)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FDMC86244-L701 Tape & Reel 3,000
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    FDMC86244 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMC86244

    Contextual Info: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMC86244 FDMC86244 PDF

    MO-240

    Contextual Info: FDMC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMC86244 MO-240 PDF

    3.3*3.3 mlp

    Contextual Info: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description „ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMC86244 FDMC86244 3.3*3.3 mlp PDF

    Contextual Info: FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mΩ Features General Description ̈ Max rDS on = 134 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMC86244 PDF