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    FDMC86240 Search Results

    FDMC86240 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86240
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 16A POWER33 Original PDF 7
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    FDMC86240 Price and Stock

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    onsemi FDMC86240

    MOSFET N-CH 150V 4.6A/16A 8MLP
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    DigiKey () FDMC86240 Tape & Reel 6,432 3,000
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    Verical () FDMC86240 67,322 209
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    FDMC86240 Tape & Reel 3,000
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    Fairchild Semiconductor Corporation FDMC86240

    N-Channel Power Trench® MOSFET
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    Win Source Electronics FDMC86240 23,139
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    FDMC86240 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    v5893

    Abstract: FDMC86240 33X3
    Contextual Info: FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Max rDS on = 51 mΩ at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86240 v5893 FDMC86240 33X3 PDF

    FDMC86240

    Contextual Info: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMC86240 FDMC86240 PDF

    FDMC86240

    Contextual Info: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMC86240 FDMC86240 PDF

    FDMC86240

    Contextual Info: FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 mΩ Features General Description ̈ Max rDS on = 51 mΩ at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMC86240 FDMC86240 PDF

    FDMC86240

    Contextual Info: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMC86240 FDMC86240 PDF