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    FDMB2307NZ Search Results

    FDMB2307NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMB2307NZ
    		Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 20V DUAL CD 6-MLP Original PDF 7
    SF Impression Pixel

    FDMB2307NZ Price and Stock

    onsemi

    onsemi FDMB2307NZ

    MOSFET 2N-CH 6MLP
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    FDMB2307NZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMB2307NZ

    Contextual Info: FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mΩ Features General Description „ Max rS1S2 on = 16.5 mΩ at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution „ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A


    Original     		FDMB2307NZ FDMB2307NZ PDF

    FDMB2307NZ

    Contextual Info: Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mΩ Features General Description „ Max rS1S2 on = 16.5 mΩ at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution „ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A


    Original     		PDF

    diode fr 307

    Abstract: FDMB2307NZ 1B57
    Contextual Info: Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mΩ Features General Description „ Max rS1S2 on = 16.5 mΩ at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution „ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A


    Original     		FDMB2307NZ FDMB2307NZ diode fr 307 1B57 PDF

    FDMB2307NZ

    Contextual Info: Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mΩ General Description Features ̈ Max rS1S2 on = 16.5 mΩ at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution ̈ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A


    Original     		PDF