FDD850N10LD Search Results
FDD850N10LD Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.3A DPAK | Original | 11 |
FDD850N10LD Price and Stock
onsemi FDD850N10LDMOSFET N-CH 100V 15.3A TO252-4L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD850N10LD | Reel |
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FDD850N10LD Datasheets Context Search
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Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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FDD850N10LD | |
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Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD850N10LD | |
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Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDD850N10LD |