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    FDC8886 Search Results

    FDC8886 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDC8886
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-SSOT Original PDF 7
    SF Impression Pixel

    FDC8886 Price and Stock

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    Rochester Electronics LLC FDC8886

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDC8886 Bulk 97,596 1,072
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    onsemi FDC8886

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
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    Rochester Electronics FDC8886 97,596 1
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    Fairchild Semiconductor Corporation FDC8886

    FDC8886 - 30V N-Channel Power Trench MOSFET
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    Rochester Electronics FDC8886 18,000 1
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    FDC8886 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING 886

    Abstract: FDC8886
    Contextual Info: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 FDC8886 MARKING 886 PDF

    Contextual Info: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 FDC8886 PDF

    Contextual Info: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 PDF