FDC8878 Search Results
FDC8878 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDC8878 |   | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-SSOT | Original | 7 | 
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| Fairchild Semiconductor Corporation FDC8878MOSFET N-CH 30V 8A 6-SSOT | |||||||||||
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|   | FDC8878 | 27,000 | 
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FDC8878 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| FDC8878Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description  Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. | Original | FDC8878 FDC8878 | |
| FDC8878Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description  Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. | Original | FDC8878 FDC8878 | |
| Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description ̈ Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. | Original | FDC8878 |