FDC633N MARKING CONVENTION Search Results
FDC633N MARKING CONVENTION Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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FDC633N MARKING CONVENTION Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDC633N marking conventionContextual Info: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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FDC633N NF073 FDC633N marking convention | |
SSOT-6
Abstract: Supersot 6 CBVK741B019 F63TNR FDC2612 FDC633N
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FDC2612 SSOT-6 Supersot 6 CBVK741B019 F63TNR FDC2612 FDC633N | |
SSOT-6
Abstract: CBVK741B019 F63TNR FDC633N FDC6401N
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FDC6401N SSOT-6 CBVK741B019 F63TNR FDC633N FDC6401N | |
Contextual Info: FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for |
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FDC6401N | |
Contextual Info: FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for |
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FDC2612 | |
FDC2512
Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
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FDC2512 FDC2512 SSOT-6 CBVK741B019 F63TNR FDC633N | |
FDC3612
Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N
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FDC3612 25oopment. FDC3612 SSOT-6 CBVK741B019 F63TNR FDC633N | |
CBVK741B019
Abstract: F63TNR FDC633N FDC645N
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FDC645N CBVK741B019 F63TNR FDC633N FDC645N | |
CBVK741B019
Abstract: F63TNR FDC3512 FDC633N
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FDC3512 CBVK741B019 F63TNR FDC3512 FDC633N | |
Contextual Info: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for |
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FDC3512 | |
SSOT-6
Abstract: CBVK741B019 F63TNR FDC633N FDC645N
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FDC645N SSOT-6 CBVK741B019 F63TNR FDC633N FDC645N | |
CBVK741B019
Abstract: F63TNR FDC5612 FDC633N
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FDC5612 CBVK741B019 F63TNR FDC5612 FDC633N | |
Contextual Info: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W |
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FDC5612 |