FDB86135 Search Results
FDB86135 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDB86135 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V D2PAK | Original | 9 |
FDB86135 Price and Stock
onsemi FDB86135MOSFET N-CH 100V 75A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB86135 | Cut Tape | 1,135 | 1 |
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FDB86135 | Reel | 22 Weeks | 800 |
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FDB86135 | 16,205 |
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FDB86135 | 205 | 2 |
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FDB86135 | Cut Strips | 205 | 22 Weeks | 1 |
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FDB86135 | Reel | 800 |
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FDB86135 |
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FDB86135 | 800 |
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FDB86135 | 2,458 |
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FDB86135 | 800 |
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FDB86135 | 22 Weeks | 800 |
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FDB86135 | 23 Weeks | 800 |
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FDB86135 | 24 Weeks | 800 |
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FDB86135 | 453 | 1 |
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FDB86135 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDB86135Contextual Info: FDB86135 tm N-Channel PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDB86135 FDB86135 | |
Contextual Info: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
Original |
FDB86135 | |
Contextual Info: FDB86135 N-Channel PowerTrench MOSFET tm 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been |
Original |
FDB86135 |