FDB86102LZ Search Results
FDB86102LZ Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDB86102LZ |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 30A D2PAK | Original | 6 |
FDB86102LZ Price and Stock
onsemi FDB86102LZMOSFET N-CH 100V 8.3A/30A TO263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB86102LZ | Cut Tape | 314 | 1 |
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FDB86102LZ | Reel | 22 Weeks | 1,600 |
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FDB86102LZ | 3,168 |
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FDB86102LZ | 6,918 | 295 |
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FDB86102LZ | 800 | 22 Weeks | 800 |
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FDB86102LZ | Reel | 800 |
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FDB86102LZ |
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FDB86102LZ | 595 |
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FDB86102LZ | 23,400 | 1 |
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FDB86102LZ | 800 |
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FDB86102LZ | 1,600 |
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FDB86102LZ | 4,160 |
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FDB86102LZ | 22 Weeks | 1,600 |
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FDB86102LZ | 23 Weeks | 800 |
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FDB86102LZ | 24 Weeks | 800 |
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FDB86102LZ | 3,200 | 1 |
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Rochester Electronics LLC FDB86102LZPOWER FIELD-EFFECT TRANSISTOR, 8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB86102LZ | Bulk | 235 |
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Fairchild Semiconductor Corporation FDB86102LZ |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB86102LZ | 896 | 3 |
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FDB86102LZ | 716 |
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FDB86102LZ | 6,918 | 1 |
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FDB86102LZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
fdb fairchild
Abstract: FDB86102 process of mosfet FDB86102LZ
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Original |
FDB86102LZ FDB86102LZ O-263AB fdb fairchild FDB86102 process of mosfet | |
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Contextual Info: FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDB86102LZ |