FDB110N15A Search Results
FDB110N15A Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDB110N15A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 92A D2PAK | Original | 9 |
FDB110N15A Price and Stock
onsemi FDB110N15AMOSFET N-CH 150V 92A D2PAK |
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FDB110N15A | Digi-Reel | 1,615 | 1 |
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FDB110N15A | Ammo Pack | 1 |
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FDB110N15A | 9,681 |
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FDB110N15A | 16,690 | 125 |
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FDB110N15A | Cut Strips | 543 | 22 Weeks | 1 |
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FDB110N15A | Cut Tape | 635 | 1 |
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FDB110N15A | Reel | 19 Weeks | 800 |
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FDB110N15A |
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FDB110N15A | 19,960 | 1 |
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FDB110N15A | 800 |
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FDB110N15A | 800 |
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FDB110N15A | 22 Weeks | 800 |
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FDB110N15A | 23 Weeks | 800 |
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FDB110N15A | 53,500 |
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FDB110N15A | 24 Weeks | 800 |
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Fairchild Semiconductor Corporation FDB110N15A |
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FDB110N15A | 351 |
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FDB110N15A | 5,232 |
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FDB110N15A | 50,000 |
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Freescale Semiconductor FDB110N15APOWER FIELD-EFFECT TRANSISTOR, 92A I(D), 150V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB110N15A | 280 |
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FDB110N15A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDB110N15AContextual Info: FDB110N15A N-Channel PowerTrench MOSFET 150 V, 92 A, 11 mΩ Features Description • RDS on = 9.25 mΩ ( Typ.) @ VGS = 10 V, ID = 92 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDB110N15A FDB110N15A | |
Contextual Info: FDB110N15A N-Channel PowerTrench MOSFET 150 V, 92 A, 11 mΩ Features Description • RDS on = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDB110N15A | |
Contextual Info: FDB110N15A N-Channel PowerTrench MOSFET 150V, 92A, 11mW Features Description • RDS on = 9.25mW ( Typ.)@ VGS = 10V, ID = 92A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDB110N15A FDB110N15A |