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FDB082N15A Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDB082N15A		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A D2PAK	Original	PDF		9

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onsemi FDB082N15A MOSFET N-CH 150V 117A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDB082N15A	Tape & Reel			800	1 - 10 - 100 - 1000 $3.21 10000 $3.21	Buy Now
Avnet Americas	FDB082N15A	Tape & Reel		23 Weeks	800	1 - 10 - 100 - 1000 $3.67 10000 $3.30	Buy Now
Mouser Electronics	FDB082N15A		1,061			1 $7.59 10 $5.17 100 $3.94 1000 $3.72 10000 $3.72	Buy Now
Verical ()	FDB082N15A		485		89	1 - 10 - 100 $4.03 1000 $3.60 10000 $3.39	Buy Now
	FDB082N15A		195		89	1 - 10 - 100 $4.03 1000 $3.60 10000 $3.39	Buy Now
	FDB082N15A		108		89	1 - 10 - 100 $4.03 1000 $3.60 10000 $3.39	Buy Now
Future Electronics	FDB082N15A	Reel		23 Weeks	800	1 - 10 - 100 - 1000 $4.68 10000 $4.68	Buy Now

Onlinecomponents.com	FDB082N15A					1 - 10 - 100 - 1000 $3.19 10000 $3.19	Buy Now
Rochester Electronics	FDB082N15A		788		1	1 - 10 - 100 $3.22 1000 $2.88 10000 $2.71	Buy Now
TME	FDB082N15A				800	1 - 10 - 100 - 1000 $4.46 10000 $4.46	Get Quote
Avnet Asia	FDB082N15A			23 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDB082N15A			24 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDB082N15A			25 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FDB082N15A 150 V, 105 A, 8.2 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FDB082N15A		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FDB082N15A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDB082N15A Abstract: FDB08 Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mΩ Features Description • RDS on = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDB082N15A FDB082N15A FDB08	PDF
Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDB082N15A FDB082N15A	PDF
Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.	Original	FDB082N15A	PDF
Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.	Original	FDB082N15A FDB082N15A	PDF