FDB082N15A Search Results
FDB082N15A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDB082N15A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A D2PAK | Original | 9 |
FDB082N15A Price and Stock
onsemi FDB082N15AMOSFET N-CH 150V 117A D2PAK |
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FDB082N15A | 34 Weeks | 800 |
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Fairchild Semiconductor Corporation FDB082N15A150 V, 105 A, 8.2 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB082N15A | 279 |
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FDB082N15A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FDB082N15A
Abstract: FDB08
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Original |
FDB082N15A FDB082N15A FDB08 | |
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Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDB082N15A FDB082N15A | |
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Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
Original |
FDB082N15A | |
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Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
Original |
FDB082N15A FDB082N15A |