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    FDB024N04AL7 Search Results

    FDB024N04AL7 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDB024N04AL7
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V D2PAK-7 Original PDF 9
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    FDB024N04AL7 Price and Stock

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    Rochester Electronics LLC FDB024N04AL7

    MOSFET N-CH 40V 100A TO263-7
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    onsemi FDB024N04AL7

    MOSFET N-CH 40V 100A TO263-7
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    Fairchild Semiconductor Corporation FDB024N04AL7

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    Bristol Electronics FDB024N04AL7 789 2
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    Rochester Electronics FDB024N04AL7 30,127 1
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    FDB024N04AL7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDB024N04AL7 N-Channel PowerTrench MOSFET 40 V, 219 A, 2.4 mΩ Features Description • RDS on = 2.0 m Ω (Typ.)@ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDB024N04AL7 PDF

    Contextual Info: FDB024N04AL7 N-Channel PowerTrench MOSFET 40V, 219A, 2.4mW Features Description • RDS on = 2.0mW ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been • Fast Switching Speed


    Original     		FDB024N04AL7 FDB024N04AL7 PDF

    d2pak-7

    Abstract: FDB024N04AL7
    Contextual Info: FDB024N04AL7 N-Channel PowerTrench MOSFET 40V, 219A, 2.4mΩ Features Description • RDS on = 2.0mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been • Fast Switching Speed


    Original     		FDB024N04AL7 25oliMAXTM d2pak-7 FDB024N04AL7 PDF