FCSI0500M200 Search Results

FCSI0500M200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1314-12F FLM1314-12F FCSI0500M200	PDF
FMM5048GJ Abstract: 28940 mmic case styles Contextual Info: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION	Original	FMM5048GJ FMM5048GJ FCSI0500M200 28940 mmic case styles	PDF
fujitsu power amplifier GHz Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt Contextual Info: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology	Original	FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz FUJITSU SEMICONDUCTOR phemt	PDF
FMM5805 Contextual Info: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	FMM5805GJ-1 FMM5805GJ-1 FCSI0500M200 FMM5805	PDF
fujitsu power amplifier GHz Abstract: UM 2200 power amplifier mmic Contextual Info: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology	Original	FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz UM 2200 power amplifier mmic	PDF
FLM7785-18F Contextual Info: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-18F -45dBc FLM7785-18F FCSI0500M200	PDF
Contextual Info: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-18F -45dBc FLM7785-18F FCSI0500M200	PDF