FCK 1 Search Results

voice scrambling

Abstract: analog audio delay variable analog delay analog delay ms audio Analog Delay Lines
Contextual Info: Continuously Adjustable Audio Delay Lines SERIES: CADL-47 100 MS Specifications: DELAY VARIATION: Delay can vary between 250|xs to 100 Ms. Delay change is given by the formula TD = 1024/FCK. The minimum clock frequency (FCK) shall be 10 times the highest analog

0364404CT3C

Abstract: 0364164PT3C-10 0364804CT3C 0364164PT3C-360 03644B 0364804CT3C-260 0364804PT3C-10 0364804CT3C-360
Contextual Info: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Advanced 64Mb Synchronous DRAM - Die Revision C Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: fcK I Clock Frequency -80, C L= 3 | 125

Contextual Info: IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -75A, : -260, : -360, : -1 0 , : . . : CL=3 : CL=2 ; CL=3 ; CL=3 ; Unlts : ! 1 00 : fCK : Clock Frequency

11-CQ2

Contextual Info: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK

P-TSOPII-54

Contextual Info: HYB 39S128400/800/160DT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM Preliminary Target Specification 10.01 High Performance: • Multiple Burst Read with Single Write Operation -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz • Automatic and Controlled Precharge

Contextual Info: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units

NT1GC72B89A0NF

Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

Contextual Info: -Preliminary IBM0364404IBM03644B4 PC133 Synchronous DRAM - 64Mb Revision B Features • High Performance: -75 A, CL=3 Units fCK Clock Frequency 133 MHz *CK Clock Cycle 7.5 ns *AC 5Clock Access Time 5.4 ns *RP | Precharge Time 22.5 ns *RCD | RAS to CAS Delay

4715-01

Contextual Info: IBM13N1649NC IBM13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

IBMN364164

Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle

Contextual Info: IBM13T4644MPE IBM13T4644MPD One Bank 4M x 64 SDRAM SO DIMM Features fcK j Clock Frequency 100 I MHz \ • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

Contextual Info: =• = IBM13M32734BCE Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32M x72 Synchronous DRAM DIMM • Performance: -260 | -360 ; -360 ! Units § Device Latency ;fcK ! Clock Frequency

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: DQS0-17 184-pin DDR SDRAM DIMM
Contextual Info: . IBMB6M64734BGA Preliminary 64Mx72 One Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Double Data Rate DDR SDRAM DIMM (64M X 4 SDRAMS) • Performance: PC1600 3.5 Units DIMM CAS Latency 3 fCK

Contextual Info: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units

Contextual Info: . IBMB6M32734HGA Preliminary 32Mx72 One Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Double Data Rate DDR SDRAM DIMM (32M X 8 SDRAMS) • Performance: PC1600 3.5 Units DIMM CAS Latency 3 fCK

Contextual Info: . IBM13Q16734HCB 16M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • 16M x 72 Synchronous DRAM DIMM • Performance: -10 Units fCK Clock Frequency CAS Latency = 2* 66 MHz tCK2 Clock Cycle 15

Q67100-Q1279

Abstract: 39516800 39S16800AT-8 39516800AT-10
Contextual Info: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic

tube az1

Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

NT5SV16M16AT

Abstract: NT5SV32M8AT NT5SV64M4AT
Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz

PC100-222-620

Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8

Contextual Info: IBM13M64734BCA 64M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: I DIMM CAS Latency fcKj Clock Frequency ! fcK i Clock Cycle I tftc i Clock Access

marking code EY SMD

Abstract: PC100-222-620 P-TSOPII-54
Contextual Info: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN

39S256160T

Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Contextual Info: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled