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    FCK 1 Search Results

    FCK 1 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FCK101
    Mullard FC Family DTL Integrated Circuits 1969 Scan PDF 249.26KB 10
    FCK102
    Mullard FC Family DTL Integrated Circuits 1969 Scan PDF 19.08KB 1
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    FCK 1 Price and Stock

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    ITT Interconnect Solutions MKJ4B1Z6-6FC-K140

    IN-LINE RECEPTACLE, ACCESSORYTHR
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    DigiKey MKJ4B1Z6-6FC-K140 Bag 50 1
    • 1 $181.25
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    Avnet Americas MKJ4B1Z6-6FC-K140 Bulk 50 16 Weeks 1
    • 1 $119.86
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    • 100 $117.42
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    Mouser Electronics MKJ4B1Z6-6FC-K140 12
    • 1 $181.45
    • 10 $156.66
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    Newark MKJ4B1Z6-6FC-K140 Bulk 1
    • 1 $134.84
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    Master Electronics MKJ4B1Z6-6FC-K140
    • 1 -
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    • 100 $136.72
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    ITT Interconnect Solutions MKJ4A1Z6-6FC-K140

    IN-LINE RECEPTACLE, BANDED , SOL
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    DigiKey MKJ4A1Z6-6FC-K140 Bag 40 1
    • 1 $147.31
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    Avnet Americas MKJ4A1Z6-6FC-K140 Bulk 25 18 Weeks 1
    • 1 $112.05
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    Mouser Electronics MKJ4A1Z6-6FC-K140 23
    • 1 $152.72
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    Newark MKJ4A1Z6-6FC-K140 Bulk 1
    • 1 $109.93
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    Master Electronics MKJ4A1Z6-6FC-K140
    • 1 -
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    • 100 $108.98
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    Vishay Cera-Mite 562RX5FCK102EE102K

    CAP CER 1000PF 1KV X5F RADIAL
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    Fluke Corporation FLK-A3001 FC KIT

    Digital Multimeters FC WIRELESS BASIC KIT WITH I3000
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    Mouser Electronics FLK-A3001 FC KIT 2
    • 1 $696.26
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    Fluke Corporation FLK-V3001 FC KIT

    Digital Multimeters FC WIRELESSESSENTIAL KIT WITH V3001
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    Mouser Electronics FLK-V3001 FC KIT
    • 1 $653.00
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    FCK 1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    voice scrambling

    Abstract: analog audio delay variable analog delay analog delay ms audio Analog Delay Lines
    Contextual Info: Continuously Adjustable Audio Delay Lines SERIES: CADL-47 100 MS Specifications: DELAY VARIATION: Delay can vary between 250|xs to 100 Ms. Delay change is given by the formula TD = 1024/FCK. The minimum clock frequency (FCK) shall be 10 times the highest analog


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    CADL-47 1I00MS 1024/FCK. CADL-47-1 CADL-47-2 CADL-47-3 CADL-47-4 Mhz-10 Mhz-20 Mhz-100 voice scrambling analog audio delay variable analog delay analog delay ms audio Analog Delay Lines PDF

    0364404CT3C

    Abstract: 0364164PT3C-10 0364804CT3C 0364164PT3C-360 03644B 0364804CT3C-260 0364804PT3C-10 0364804CT3C-360
    Contextual Info: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Advanced 64Mb Synchronous DRAM - Die Revision C Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: fcK I Clock Frequency -80, C L= 3 | 125


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    IBM0364404 IBM0364804 IBM0364164 IBM03644B4 cycles/64ms 39-page 49-page 0364404CT3C 0364164PT3C-10 0364804CT3C 0364164PT3C-360 03644B 0364804CT3C-260 0364804PT3C-10 0364804CT3C-360 PDF

    Contextual Info: IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -75A, : -260, : -360, : -1 0 , : . . : CL=3 : CL=2 ; CL=3 ; CL=3 ; Unlts : ! 1 00 : fCK : Clock Frequency


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    IBM0364804 IBM0364164 IBM0364404 IBM03644B4 PDF

    11-CQ2

    Contextual Info: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK


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    IBM13N4649JC IBM13N4739JC 4Mx64/72 11-CQ2 PDF

    P-TSOPII-54

    Contextual Info: HYB 39S128400/800/160DT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM Preliminary Target Specification 10.01 High Performance: • Multiple Burst Read with Single Write Operation -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz • Automatic and Controlled Precharge


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    39S128400/800/160DT 128-MBit HYB39S128400/800/160DT P-TSOPII-54 PDF

    Contextual Info: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units


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    IBM13M64734CCA 168-Pin 64Mx72 66/100MHz PC100 09K3884 F38744 PDF

    NT1GC72B89A0NF

    Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
    Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency


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    NT1GC72B89A0NF NT2GC72B8PA0NF NT1GC72B89A1NF NT2GC72B8PA1NF PC3-8500 PC3-10600 DDR3-1066/1333 128Mx8 PC3-8500 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600 PDF

    Contextual Info: -Preliminary IBM0364404IBM03644B4 PC133 Synchronous DRAM - 64Mb Revision B Features • High Performance: -75 A, CL=3 Units fCK Clock Frequency 133 MHz *CK Clock Cycle 7.5 ns *AC 5Clock Access Time 5.4 ns *RP | Precharge Time 22.5 ns *RCD | RAS to CAS Delay


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    IBM0364404IBM03644B4 PC133 IBM0364404 IBM03644B4 400mil; 256Mb PDF

    4715-01

    Contextual Info: IBM13N1649NC IBM13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency


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    IBM13N1649NC IBM13N1809NC 1Mx64/80 SA14-4715-01 4715-01 PDF

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


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    HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333 PDF

    IBMN364164

    Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
    Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle


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    IBMN364164 IBMN364804 IBMN364404 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360 PDF

    Contextual Info: IBM13T4644MPE IBM13T4644MPD One Bank 4M x 64 SDRAM SO DIMM Features fcK j Clock Frequency 100 I MHz \ • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only


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    IBM13T4644MPE IBM13T4644MPD 4Mx64 PDF

    Contextual Info: =• = IBM13M32734BCE Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32M x72 Synchronous DRAM DIMM • Performance: -260 | -360 ; -360 ! Units § Device Latency ;fcK ! Clock Frequency


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    IBM13M32734BCE 168-Pin PC100 PDF

    SO DIMM DRAM 144 Pin Connector Pinout

    Abstract: DQS0-17 184-pin DDR SDRAM DIMM
    Contextual Info: . IBMB6M64734BGA Preliminary 64Mx72 One Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Double Data Rate DDR SDRAM DIMM (64M X 4 SDRAMS) • Performance: PC1600 3.5 Units DIMM CAS Latency 3 fCK


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    IBMB6M64734BGA 64Mx72 184-Pin PC1600 06K6597 H02812A SO DIMM DRAM 144 Pin Connector Pinout DQS0-17 184-pin DDR SDRAM DIMM PDF

    Contextual Info: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units


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    IBM13M64734CCA 168-Pin 64Mx72 66/100MHz PC100 PDF

    Contextual Info: . IBMB6M32734HGA Preliminary 32Mx72 One Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Double Data Rate DDR SDRAM DIMM (32M X 8 SDRAMS) • Performance: PC1600 3.5 Units DIMM CAS Latency 3 fCK


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    IBMB6M32734HGA 32Mx72 184-Pin PC1600 19L7358 H02502A PDF

    Contextual Info: . IBM13Q16734HCB 16M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • 16M x 72 Synchronous DRAM DIMM • Performance: -10 Units fCK Clock Frequency CAS Latency = 2* 66 MHz tCK2 Clock Cycle 15


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    IBM13Q16734HCB 200-Pin 04K8915 C75644E PDF

    Q67100-Q1279

    Abstract: 39516800 39S16800AT-8 39516800AT-10
    Contextual Info: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic


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    HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil Q67100-Q1279 39516800 39S16800AT-8 39516800AT-10 PDF

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


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    39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15 PDF

    NT5SV16M16AT

    Abstract: NT5SV32M8AT NT5SV64M4AT
    Contextual Info: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz


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    NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT PDF

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


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    39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3 PDF

    Contextual Info: IBM13M64734BCA 64M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: I DIMM CAS Latency fcKj Clock Frequency ! fcK i Clock Cycle I tftc i Clock Access


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    IBM13M64734BCA 168-Pin 64Mx72 66/100MHz PC100 13M64734BCA PDF

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Contextual Info: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


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    HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54 PDF

    39S256160T

    Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
    Contextual Info: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled


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    YB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T APA10 39S256160T-8 39S256400T-8 PDF