FCI25N60N Search Results
FCI25N60N Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FCI25N60N |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A I2PAK | Original | 8 | |||
FCI25N60N_F102 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A I2PAK | Original | 8 | |||
FCI25N60N-F102 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 25A I2PAK | Original | 714.57KB |
FCI25N60N Price and Stock
onsemi FCI25N60NMOSFET N-CH 600V 25A I2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCI25N60N | Tube | 50 |
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onsemi FCI25N60N-F102MOSFET N-CH 600V 25A I2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCI25N60N-F102 | Tube |
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FCI25N60N-F102 | Bulk | 1,000 |
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FCI25N60N-F102 | 57 | 1 |
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FCI25N60N-F102 | 569 |
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Fairchild Semiconductor Corporation FCI25N60N_F102Transistors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCI25N60N_F102 | 57 |
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FCI25N60N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology |
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FCI25N60N | |
Contextual Info: FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from |
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FCI25N60N | |
FCI25N60N
Abstract: mosfet 600V 25A
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FCI25N60N mosfet 600V 25A |