FCH10A06 DIODE Search Results

FCH10A06

Contextual Info: SBD T y p e : FCH10A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

Contextual Info: SBD T y p e : FCH10A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

Contextual Info: SBD T y p e : FCH10A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

Contextual Info: SCHQTTKY BARRIER DIODE FCH10A06 ioa/60v 3.H.122 MAX FEA TU RES 3 .4 U 3 4 ) . 10.3 .405)_ MAX ^ •TIhTHR 4.8M89I MAXi O Sim ilar to TO-220AB Case O Fully Molded Isolation — ?— f fi.9(.2?2) I iOiOT j 2.85(112) 2.5n(.100) L irv4(.6()fi> TTKTnHlïi

FCH10A06

Contextual Info: 10A Avg. 60 Volts SBD FCH10A06 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

H122

Abstract: im 327 FCH10A06
Contextual Info: SCHOTTKY BARRIER DIODE FCH10A06 ioa/sov 3 .H .1 2 2 10.3 .405)^ M AX FEA TU RES «.8U 89I M AXi O S im ila r to T 0 -2 2 0 A B C ase r M AX ^ — ?-f fi.9 (.2 7 ì) I R1Î135Î j & O F u lly M olded Isolatio n 3.4( . W ) n TUT35e 2.5ri(.100) I* ir»-4(.606>

Contextual Info: SBD T y p e : FCH10 FCH10A 10A06 OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings

FCH10A06

Abstract: fch10a06 diode 10A06
Contextual Info: SBD T y p e : FCH10 FCH10A 10A06 OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings

Contextual Info: SBD T y p e : FCH10 FCH10A 10A06 OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings

10A06

Abstract: FCH10A06
Contextual Info: SBD T y p e : FCH10 FCH10A 10A06 OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings

Contextual Info: SCHOTTKY BARRIER DIODE FC H 10 A 0 6 io a / gov FEATURES o Similar to T0-220AB Case o Fully Molded Isolation ODual Diodes-Cathode Common o Low Forward Voltage Drop oL ow Power Loss, High Efficiency oH igh Surge Capability OTj = 150°C operation A pprox. N et Weight : 1.75 G ram s

FRH20A10

Abstract: FCH20A20 FRH20A20 Schottky Diodes 5A TC108 TC116 TC105 FCH10 fcq06a06 FCL30A015 tc122 25
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-220AB Full Pack FSH04A03LB 30 4 Tc=132℃ 100 0.56 1 150 14B FSH04A04B FSH04A06B FSH04A10B 40 60 100 4 4 4 Tc=131℃ Tc=129℃ Tc=126℃

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ