FCD9N60NTM Search Results

FCD9N60NTM Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FCD9N60NTM		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9A DPAK	Original	PDF		8

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onsemi FCD9N60NTM MOSFET N-CH 600V 9A DPAK
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DigiKey ()	FCD9N60NTM	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	FCD9N60NTM	Digi-Reel			1	1 $2.54 10 $2.54 100 $2.54 1000 $2.54 10000 $2.54	Buy Now
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Bristol Electronics ()	FCD9N60NTM		33		2	1 - 10 $2.18 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
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Quest Components	FCD9N60NTM		26			1 $4.50 10 $2.25 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
Fairchild Semiconductor Corporation FCD9N60NTM Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK
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Win Source Electronics	FCD9N60NTM		1,355			1 - 10 - 100 $2.24 1000 $1.94 10000 $1.94	Buy Now

FCD9N60NTM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fcd9n60 Abstract: FCD9N60NTM 10s-108 FCD9N60N Contextual Info: SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385Ω Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCD9N60NTM fcd9n60 FCD9N60NTM 10s-108 FCD9N60N	PDF
FCD9N60NTM Abstract: FCD9N60N Contextual Info: SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process	Original	FCD9N60NTM FCD9N60NTM FCD9N60N	PDF
Contextual Info: FCD9N60NTM N-Channel SupreMOS MOSFET 600 V, 9 A, 385 mΩ Features Description • RDS on = 330 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from	Original	FCD9N60NTM	PDF
FCD9N60 Contextual Info: SuperMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precie process	Original	FCD9N60NTM FCD9N60NTM FCD9N60	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF