Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FBGA 12 X 12 THERMAL RESISTANCE Search Results

    FBGA 12 X 12 THERMAL RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650M-F-COVER
    Murata Manufacturing Co Ltd PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical PDF
    TCTH022AE
    Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Datasheet
    TCTH011AE
    Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Datasheet
    TCTH011BE
    Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type Datasheet
    TCTH012AE
    Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Datasheet

    FBGA 12 X 12 THERMAL RESISTANCE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MT41K256M32

    Abstract: MT41K 256M32 MT41K256M16 MT41K256M32SGB-125M MT41K256M3 MT41K256M MT41K256 MT41K256M16 SPD FBGA DDR3 x32
    Contextual Info: Preliminary‡ 8Gb: x32 TwinDie DDR3Lm SDRAM Description TwinDie 1.35V DDR3Lm SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (10mm x 14mm x 1.2mm) Rev. E


    Original
    MT41K256M32 MT41K256M16 MT41K256M32. SAC305 09005aef84ab372c MT41K256M32 MT41K 256M32 MT41K256M32SGB-125M MT41K256M3 MT41K256M MT41K256 MT41K256M16 SPD FBGA DDR3 x32 PDF

    Contextual Info: IS61QDP2B42M18A/A1/A2 IS61QDP2B41M36A/A1/A2 2Mx18, 1Mx36 36Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                    1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original
    IS61QDP2B42M18A/A1/A2 IS61QDP2B41M36A/A1/A2 2Mx18, 1Mx36 2Mx18 400MHz 333MHz 300MHz PDF

    CY7C1071DV33

    Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM 32-Mbit (2 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 83.3 MHz ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power


    Original
    CY7C1071DV33 32-Mbit CY7C1071DV33 I/O15) 48-ball PDF

    Contextual Info: IS61QDP2B42M18A IS61QDP2B41M36A 2Mx18, 1Mx36 36Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                    1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original
    IS61QDP2B42M18A IS61QDP2B41M36A 2Mx18, 1Mx36 2Mx18 400MHz 333MHz 300MHz PDF

    Contextual Info: IS61QDPB42M18A IS61QDPB41M36A 2Mx18, 1Mx36 36Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.5 Cycle Read Latency) FEATURES •                    1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original
    IS61QDPB42M18A IS61QDPB41M36A 2Mx18, 1Mx36 2Mx18 500MHz 450MHz 400MHz PDF

    Contextual Info: IS61QDPB41M18A IS61QDPB451236A 1Mx18, 512Kx36 18Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.5 Cycle Read Latency) FEATURES •                    512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original
    IS61QDPB41M18A IS61QDPB451236A 1Mx18, 512Kx36 1Mx18 500MHz 450MHz 400MHz PDF

    Contextual Info: CY7C1460AV25 CY7C1462AV25 36-Mbit 1 M x 36/2 M × 18 Pipelined SRAM with NoBL Architecture 36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original
    CY7C1460AV25 CY7C1462AV25 36-Mbit CY7C1460AV25/CY7C1462AV25 CY7C14ponents PDF

    Contextual Info: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)


    Original
    CY14B108L CY14B108N CY14B108L) CY14B108N) 44-/54-pin 48-ball PDF

    Contextual Info: CY7C1441AV33 36-Mbit 1 M x 36 Flow-Through SRAM 36-Mbit (1 M × 36) Flow-Through SRAM Features Functional Description • Supports 133-MHz bus operations ■ 1 M × 36 common I/O ■ 3.3 V core power supply ■ 2.5 V or 3.3 V I/O power supply ■ Fast clock-to-output times


    Original
    CY7C1441AV33 36-Mbit CY7C1441AV33 133-MHz PDF

    Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • •


    Original
    Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F PDF

    MS-026

    Abstract: MT55L128L18P1 MT55L128L18P1T-10 MT55L64L32P1 MT55L64L36P1 MT55L128
    Contextual Info: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM 2Mb ZBT SRAM MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 3.3V VDD, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization


    Original
    MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 June/21/00 x32/36 165-Pin May/23/00 MT55L128L18P1 MS-026 MT55L128L18P1T-10 MT55L64L32P1 MT55L64L36P1 MT55L128 PDF

    27934

    Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)


    Original
    CY14B101LA CY14B101NA CY14B101LA) CY14B101NA) 32-pin 44-/54-pin 48-pin 27934 PDF

    Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • •


    Original
    Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P PDF

    Contextual Info: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization


    Original
    Apr/13/00 Apr/6/00 Jan/18/00 119-pin MT55L1MY18P, Nov/11/99 MT55L1M18P PDF

    Contextual Info: IS61QDB22M18A IS61QDB21M36A 2Mx18, 1Mx36 36Mb QUAD Burst 2 Synchronous SRAM FEATURES •                  1Mx36 and 2Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data valid window.


    Original
    IS61QDB22M18A IS61QDB21M36A 2Mx18, 1Mx36 2Mx18 13x15 PDF

    IS61QDB41M36A

    Contextual Info: IS61QDB42M18A IS61QDB41M36A 2Mx18, 1Mx36 36Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   1Mx36 and 2Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data valid window.


    Original
    IS61QDB42M18A IS61QDB41M36A 2Mx18, 1Mx36 2Mx18 13x15 IS61QDB41M36A PDF

    Contextual Info: IS61QDB41M18A IS61QDB451236A 1Mx18, 512Kx36 18Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original
    IS61QDB41M18A IS61QDB451236A 1Mx18, 512Kx36 1Mx18 13x15 PDF

    Contextual Info: IS61QDB42M18A IS61QDB41M36A 2Mx18, 1Mx36 36Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   1Mx36 and 2Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data valid window.


    Original
    IS61QDB42M18A IS61QDB41M36A 2Mx18, 1Mx36 2Mx18 13x15 PDF

    Contextual Info: IS61QDB41M18A IS61QDB451236A 1Mx18, 512Kx36 18Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES •                   512Kx36 and 1Mx18 configuration available. On-chip Delay-Locked loop (DLL) for wide data valid


    Original
    IS61QDB41M18A IS61QDB451236A 1Mx18, 512Kx36 1Mx18 13x15 PDF

    Contextual Info: IS61QDB24M18A IS61QDB22M36A 4Mx18, 2Mx36 72Mb QUAD Burst 2 Synchronous SRAM FEATURES •                  2Mx36 and 4Mx18 configuration available. On-chip Delay-Locked loop (DLL) for wide data valid window.


    Original
    IS61QDB24M18A IS61QDB22M36A 4Mx18, 2Mx36 4Mx18 13x15 PDF

    Contextual Info: 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •


    Original
    119-pin 165-pin MT55L256L18P1 PDF

    IS49NLC96400

    Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz


    Original
    IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 533MHz 533MHz) 144-ball) PDF

    IS61DDB42M36A

    Contextual Info: IS61DDB44M18A IS61DDB42M36A 4Mx18, 2Mx36 72Mb DDR-II Burst 4 CIO SYNCHRONOUS SRAM FEATURES •                  2Mx36 and 4Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original
    IS61DDB44M18A IS61DDB42M36A 4Mx18, 2Mx36 4Mx18 13x15 IS61DDB42M36A PDF

    Contextual Info: CY7C1518KV18 CY7C1520KV18 72-Mbit DDR II SRAM Two-Word Burst Architecture 72-Mbit DDR II SRAM Two-Word Burst Architecture Features Configurations • 72-Mbit density 4 M x 18, 2 M × 36 CY7C1518KV18 – 4 M × 18 ■ 333 MHz clock for high bandwidth CY7C1520KV18 – 2 M × 36


    Original
    CY7C1518KV18 CY7C1520KV18 72-Mbit PDF