FBGA 12 X 12 Search Results

Contextual Info: BCM2132 PRODUCT Brief EDGE/GPRS/GSM SINGLE-CHIP MULTIMEDIA BASEBAND PROCESSOR FEATURES SUMMARY OF BENEFITS • Comprehensive EDGE/GPRS/GSM system design • Single mixed-signal package options: • 256 pin FBGA @ 14 x 14 mm • 276 pin FBGA @ 12 x 12 mm

teaklite

Abstract: BCM2122 sim card processor gsm 07.05 gsm Car Charger PCMCIA SRAM Card ARM926EJ CCIR-656 E-GSM900 GSM1800
Contextual Info: BCM2122 PRODUCT Brief GPRS/GSM SINGLE-CHIP MULTIMEDIA BASEBAND PROCESSOR B C M 2 1 2 2 C O M P L E T E H A N D S E T S O F T W A R E F E AT U R E S 14 x 14 mm, Single 256-pin FBGA device • optional 12 x 12 mm • GSM voice handset capabilities: FR/EFR/HR/AMR

8AY1

Contextual Info: 381-PIN PLASTIC FBGA 12.7x12.7 w S A D ZE ZD A 23 21 19 17 B 15 13 E 11 9 24 22 20 18 16 14 12 10 7 5 3 1 6 4 2 AC AA W U R N L J G E C A AD AB Y V T P M K H F D B w S B INDEX MARK 8 A y1 A2 S (UNIT:mm) S y e S b x M A1 S AB ITEM DIMENSIONS D 12.70±0.10

481-PIN

Contextual Info: 481-PIN PLASTIC FBGA 12.7x12.7 D w S A ZE ZD A 23 21 19 17 B 15 13 E 11 9 24 22 20 18 16 14 12 10 7 5 3 1 x4 v INDEX MARK w S B S A2 e S b x M A1 S AB 4 2 (UNIT:mm) S y 6 AC AA W U R N L J G E C A AD AB Y V T P M K H F D B A y1 8 ITEM D DIMENSIONS E 12.70 ±0.10

IS43TR16640A

Abstract: IS43TR81280A DDR31866K 64MX16 bc 888
Contextual Info: IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V         

1152-pin

Abstract: AGX51001-2 EP1AGX60D
Contextual Info: 1. Arria GX Device Family Overview AGX51001-2.0 Introduction The Arria GX family of devices combines 3.125 Gbps serial transceivers with reliable packaging technology and a proven logic array. Arria GX devices include 4 to 12 high-speed transceiver channels, each incorporating clock data recovery CDR

TOP SIDE MARKING OF MICRON

Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512
Contextual Info: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz

Contextual Info: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz

JEDEC FBGA

Abstract: fBGA package tray 12 JEDEC TRAY DIMENSIONS FBGA fBGA package tray FBGA 12x12 ESP TRAY FBGA 12x12 TRAY FBGA 160 FBGA-12 fBGA 12 package tray
Contextual Info: TRAY CONTAINER UNIT : mm 8x20=160 NEC 114.8 12.30 7 135°C MAX. A' 12.30 15.50 10.25 294.5 315.0 322.6 Section A – A' (6.29) 12.30 12.00 (6.35) 7.62 16.40 FBGA12×12ESP-1 10.55 135.9 PPE A Applied Package Quantity (pcs) Tray FBGA 12×12 ESP-1 121-pin Plastic FBGA (12×12)

CY62137CV

Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance
Contextual Info: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power

JEDEC FBGA

Abstract: 196-PIN 181-pin
Contextual Info: TRAY CONTAINER UNIT : mm 11x29=319 NEC 7 8.20 296.8 315.0 322.6 8.20 Section A – A' 8.00 (5.62) 7.62 11.65 135°C MAX. 8.20 10.60 9.10 (6.04) 116.5 A' FBGA8×8ESP 9.70 135.9 PPE A Applied Package Quantity (pcs) Tray FBGA8×8ESP Material Carbon PPE 121-pin PLASTIC FBGA (8×8)

78 ball fbga

Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       

CY7C1021BV33

Abstract: CY7C1021CV33
Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

power transistor tsd 4m

Abstract: 12 x 12 fbga thermal resistance
Contextual Info: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA Functional Description The CY7C1079DV33 is a high performance CMOS Static RAM

GDDR5 hynix

Contextual Info: Last Updated: Sep. 2012 GRAPHICS MEMORY PART NUMBERING H 5 T X XX X X X X X - XX X 1 2 3 4 56 7 8 9 10 11 12 13 14 HYNIX MEMORY OPERATING TEMPERATURE & POWER CONSUMPTION PRODUCT FAMILY 5 : DRAM C : Commercial Temp1 & Normal Power PRODUCT MODE T : DDR3 SDRAM

SSD-A-H7391-2

Abstract: FBGA 152 JEDEC TRAY DIMENSIONS FBGA
Contextual Info: TRAY CONTAINER UNIT : mm 8x19=152 112.0 NEC 135°C MAX. A' 16.15 13.40 16.00 FBGA13×13ESP 13.40 12.15 290.7 315.0 322.6 Section A – A' 13.40 (5.62) (5.82) 12.70 7.62 11.95 135.9 PPE A Applied Package Quantity (pcs) Tray FBGA 13×13 ESP 381-pin Plastic FBGA (12.7×12.7)

CY7C1021CV33-10ZC

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

NP351

Abstract: NP351-16914 NP351-28508 FBGA 1760 65113 NP351 yamaichi
Contextual Info: NP351 Series Open Top Fine Ball Grid Array (FBGA) Part Number (Details) NP351 - 120 14 - * - * Specifications Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: 1,000MΩ min. at 100V DC

DAEWON tray 48

Abstract: daewon tray daewon 3476a 12B-0609-F19 12B-0608-F19 VBK048 TRAY MPPO DAEWON FBGA FBGA 6x8
Contextual Info: ‹ Chapter 5 Trays Fine-Pitch Ball Grid Array: FAA 064 322.6 315.0 * 2.54 R. 4 PLACES VACUUM PICKUP CELLS 10 PLACES (6 CENTER CELLS, 4 SIDE CELLS) 5.62* X 7.62 SEE DETAIL "D" Z Y SEE DETAIL "E" X X 112.0 135.9* ±0.25 92.1 * 16.00 B 12.7 * 11.95 CHAMFER

Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

256mb ddr333 200 pin

Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

75Z MARKING

Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds

Contextual Info: ‘H’ Part number Last Updated: May. 2012 H 5 T Q XX X X X X X - XX X 1 2 3 4 56 7 8 9 10 11 12 13 14 HYNI X MEMORY OPERATI NG TEMPERATURE & POWER CONSUMPTI ON PRODUCT FAMI LY 5 : DRAM C : Commercial Temp1 & Normal Power L : Commercial Temp1) & Low Power