FAY RF Search Results

Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY, Michael ASIS, Jose SALTA Doc. Nr. Date: 2008/02/14 General solder mounting recommendations

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Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/05/10 General solder mounting recommendations

Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Bolt down mounting recommendations for Ldmos Power Amplifier Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/03/27 Bolt down mounting recommendations for

Rxotf

Abstract: AUXILIARY CONTACT RELAY DGLB asea ri 5A relay
Contextual Info: Bnfo-Nç. A S E A Re fay Division INFORMATION KK 422-300 E, Ed. 1 Frorn/Dalo R09. pa^i RFR, A p ril 1970 5623 1 O yer- and u n d e r -v o lc a g e r e l a y RXfeF 2 OUTSTANDING • Static relay of plug-in design; aU semiconductor components o f silicon type

OF RS 8960

Contextual Info: •M easurement systems for Bluetooth Qualification testing Measurement items Specifications of facilities RF Comformance Testing Protocol/ Comformance Testing 3X7X3m Shielded room dimensions 6X7m Measurement room Measurement devices 626 RF measurment system

cp clare reed relay

Abstract: CP Clare RELAY CP Clare RELAY cup cp clare 5v reed relay REED RELAY clare clare reed relays Clare reed RELAY D110-P clare relay cup cp clare
Contextual Info: PRODUCT INFORMATION IAD110P Circuits Division CPCJare CORPORATION ODUCT OFFERING Advanced Magnetic Products Circuits Products Modem Isolation Transformers Encapsulated Modem Isolation Transformers Surface Mount Modem Isolation Transformers Single Pole OptoMOS Relays

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Contextual Info: ^ gnr> IS1604 IS1604 OPfC Light Detector for 4 times Speed CD-ROM Drive • Features ■ Outline Dimensions U nit : m m 1. OPIC light delector for RF signal detection 16-division PIN and amplifier TC integrated onto single chip) 0.5 n n nnr ti Lj Ü 2. High speed response type (response frequency : MIN. 8MHz)

Contextual Info: 3 4 ThS* dacuur r t k tJn« property oF Aisphanol Carpor^ttan end Ik dairvanad an the a^ rrss csnaftabn l>ul rfc s not ta bo dkdond, roprnlucnd or uwwd . In vtiDle or k port , Tor nonuTacturr or sale by anyone other -than AnpharoL Corporatfcn nTthout Ffca prtar cancan't s ond that no Hfaht k

"Dual Schottky Rectifier"

Abstract: OM4014SP4 577R
Contextual Info: QM4014SP4 DUAL UNCOMMITTED POWER SCHOTTKY RECTIFIER MODULE IN PLASTIC SIP PACKAGE 16 Amp, 45 Volt, Dual Schottky Rectifier In Isolated Power Package ITT! FEATURES Dual Schottky Rectifier in a Single Isolated Package Very Low Forward Voltage Low Recovery Charge

Contextual Info: samîec SPEC IFIC A T IO N S Materials: In su lator M aterial: Black Liquid Crystal Polym er Term inal Material: P hosphor Bronze C urrent Rating: 1A @ SO C am bient O p erating Tem p Range: -65"C to + 1 2 5 'C Max Processing Temp: 2 3 0 7C for 60 seconds

Contextual Info: UNCONTROLLED DOCUMENT 1,20 [0 ,0 4 7 ] PART NUMBER REV. SSH-LXH509 <2 PL S. R I.00 [R 0.0 39] <4 PL S.) 4,00 [0,157] 35' LE D I, LED 3 R I,50 [R 0.0 59] 1.00 [0 .0 3 3 ] 06.10 W 0 .2 4 0 ] <3 PLS.) Û.5Û [0.020] — I 1.00 [0 .0 3 9 ] ^ 3,00 [0,118] N0TE5:

Contextual Info: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-605C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

16451 ic

Abstract: TCD1018C
Contextual Info: Microsemi Thyristor Surge Protective Devices Part Number I TSPD TSH1010C TSH1011C TSMBG1010C TSMBJ1010C TCD1011C TSEP1011C TSES1011C TSF1011C TSMBG1011C TSMBJ1011C TCD1012C TSEP1012C TSES1012C TSF1012C TSH1012C TSMBG1012C TSMBJ1012C TCD1014C TSEP1014C TSES1014C

SP6313US

Abstract: 1N4S35 9842 1N5988B
Contextual Info: Zener Regulator Diodes M/crasgn/ - Part Number Microsemi Division Mil Data Power W ' Spec Sheet ID Package Outline Typo B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-213AA DO-213AA DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA

pq12 sharp

Abstract: pq 12 rf 11 sharp FAY RF
Contextual Info: Low Power-Loss Voltage Regulators PQ05RF12/PQ05RF13 Series PQ05RF12/PQ05RF13 Series 1A Output Low Power-Loss Voltage Regulators Considering Power line Voltage Drop Outline Dimensions • Unit : mm Features • Low power-loss ( Dropout voltage : MAX.0.5V)

WR-229 circulator

Abstract: waveguide isolators CIRCULATOR wr75 low loss waveguide WR-90 38-K-6 8k679 wr42 WR10
Contextual Info: 3-Port Low Power Waveguide Junction Circulators and Isolators Features • -20°C to +70°C Temperature flange ■ Broad Range of Custom Features ■ Standard Mating Flanges Description Waveguide junction devices are available in all the standard waveguide

0.5 MIETEC CMOS

Abstract: MTC-3054
Contextual Info: MTC-3054 C A N Interface Data Sheet Preliminary Application Specific Standard Products Features Description • Technology: High voltage BICMOS HBIMOS • Line interface circuit fo r Controller A rea N etw o rk (CAN - IS O /DIS 1 18 9 8 ) • Up to 1 M b it d ata rates

ENGLISH ELECTRIC VALVE c1149

Abstract: C1149 C1149A ENGLISH ELECTRIC VALVE English Electric Valve Tetrode 97B OX c1149/1 715C OX 97B 1r1f
Contextual Info: ABRIDGED DATA C l 149/1 is *j high vacuum, radial boani tetrode designed primarily ioc thu out­ put stJo«' *n power amplifier pulse modulators. It is o' rugqed com truction and is o development of the C 1149. bemy idunticai electrically but having a modified envolopa desajri to give impioved m cduim cal dwnicteristics.

UC5613

Contextual Info: T h e U N Doc #; 5203 /.in fin iti M I n f i n i t e I C K i H I P o w e r L C! o f 1 r\ ) N I ( LX5203 S 9 -L ine SCSI A ctive P R O D U C T I O N I n n o v a t i o n KEY su m es o nly 600)iA o f current. Linfinity's p ro p rietary BiCMOS low d ro p o u t re g u la to r

1RF9520

Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Contextual Info: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -

LC7366

Abstract: LC7365
Contextual Info: ¿M -IW O N * 66£ B /8£ l/ - B H S 0 £ t / f t i f < U 9 9 0 2 / a g :R O A ¿ lC C t è • te I I n kJ a LC7365.7366 L C 7365 3 , 5*545 -oTON€OUT voo V D O o J" LC7366 OSCI 3.5 * 1 f e 5*1 j MHS ;-:’v : 11 -oXMIT UJ T ttiA im r Mutt Logic 0 ic INH

BA1450S

Abstract: am shortwave radio circuit
Contextual Info: AM radio / FM IF stereo system 1C BA1450S The BA1450S is a tuner system IC for electronic tuning for AM radios, FM IF, and MPX. it has been developed for HiFi component applications. The MPX VCO circuit requires no adjustment, which will enable a reduction in the number of production line pro­

C4318

Abstract: trf 740 s22b 2SC4318 mur 1250 mur S22B
Contextual Info: I ' J j i l l O M . SEM ICO N D U CTO R T O SH IB A TECHNICAL i l i O K 2SC4318 SILICON NPN EPITAXIAL PLANAR TYPE DATA 25C4318 U n it in nun V H F-U H f BAND LOW NOISE AMPUFIER APPLICATIONS. «*6 MAX. 1.6 M A X . •a4±aos. > Low Noise Figure, High Gain.

Contextual Info: # HONDA TSUSHIN KOGYO CO., LTD. A s the signal speed and packaging density increase in modern built-in electronic equipment like com ­ puters, equipment shielding and signal attenuation are becoming increasingly important problems to be solved. Thus, the improvement in performance and